Short-channel effect

In electronics, a short-channel effect is an effect whereby a MOSFET in which the channel length is the same order of magnitude as the depletion-layer widths (xdD, xdS) of the source and drain junction, behaves differently from other MOSFETs.

As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise.[1]

The short-channel effects are attributed to two physical phenomena:

  1. the limitation imposed on electron drift characteristics in the channel,
  2. the modification of the threshold voltage due to the shortening channel length.

In particular five different short-channel effects can be distinguished:[2]

  1. drain-induced barrier lowering and punchthrough
  2. surface scattering
  3. velocity saturation
  4. impact ionization
  5. hot electron effect

References

  1. ↑ F. D’Agostino, D. Quercia. "Short-Channel Effects in MOSFETs" (PDF).
  2. ↑ http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_7.htm

See also

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