List of semiconductor fabrication plants

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This is a list of semiconductor fabrication plants:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Technology/products
XMC China, Wuhan 300 NAND, NOR and CMOS image sensor
ISRO SCL India, Chandigarh 200 180 MEMS, CMOS, CCD, N.S.
Dongbu HiTek Fab1 South Korea, Bucheon 200 150~350 Analog & Power, Mixed Signal, HV CMOS
Dongbu HiTek Fab2 South Korea, Eumsung, 200 90–350 Analog & Power, Mixed-Signal, NVM, CIS, High Voltage CMOS, eFlash, sFlash
Silterra Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90–180 28,000–30,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Microchip Fab 2 USA, AZ, Tempe 1994 200
Microchip Fab 4 USA, OR, Gresham 2004 200
Microchip Fab 5 USA, CO, Colorado Springs 150
Nanya Fab Taiwan, ? 199x 300 DRAM
Intel D1D[1][2] USA, OR, Hillsboro 2003 300 10 / 14 / 22 Microprocessors[3]
Intel D1C[1][2] USA, OR, Hillsboro 2001 300 14 / 22 / 32 Microprocessors[3]
Intel D1X[4][2] USA, OR, Hillsboro 2013 300 10 / 14 Microprocessors[3]
Intel Fab 12[1][2] USA, AZ, Chandler 1996 300 22 / 65 Microprocessors & Chipsets[3]
Intel Fab 32[1][5] USA, AZ, Chandler 3 2007 300 45
Intel Fab 32[1][2] USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[3]
Intel Fab 42[6][7][2] USA, AZ, Chandler 5 2020 (plan)[8] 300 7 Microprocessors[3]
Intel Fab 11x[1][2] USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[3]
Intel Fab 18[9] Israel, Kiryat Gat 1996 200 65 Microprocessors and chipsets[10]
Intel Fab 10[1] Ireland, Leixlip 1994 200
Intel Fab 14[1] Ireland, Leixlip 1998 200
Intel Fab 24[1][2] Ireland, Leixlip 2004 300 14 / 65 / 90[11] Microprocessors, Chipsets and Comms[3]
Intel Fab 28[1][2] Israel, Kiryat Gat 2008 300 22 / 45 Microprocessors[3]
Intel Fab 68[1][12] China, Dalian 2.5 2010 300 65[13] VNAND[3]
TowerJazz (former Maxim) San Antonio[14] USA, TX, San Antonio 2003 200
Apple (formerly Maxim, formerly Samsung) X3[15] USA, CA, San Jose ?, 1997, 2015[16]
Maxim MaxFabNorth[17] USA, OR, Beaverton
Mikron Russia, Zelenograd 90-180
VSP Mikron WaferFab[18] Russia, Voronezh 1959 100/150 900+ 6000 Analog, power
Motorola MOTOFAB1[19] Mexico, Guadalajara 2002
Micron Fab 6 USA, VA, Manassas 300 25[20] DRAM, NAND FLASH, NOR
Micron Fab 4[21] USA, ID, Boise 300 RnD
Micron Fab 13[22] Singapore, Singapore 200 NOR
Micron Fab 10[23] Singapore, Singapore 300 NAND FLASH
Micron Fab 7 (former TECH Semiconductor, Singapore)[24] Singapore, Singapore 300 NAND FLASH
Micron Fab 15 (former Elpida Memory, Hiroshima)[21] Japan, Hiroshima 300 20 and under DRAM
Micron Fab 16 (former Rexchip, Taichung)[21] Taiwan, Taichung 300 30 and under DRAM
Micron Fab 11 (former Inotera)[25] Taiwan, Taoyuan 300 20 and under DRAM
GlobalFoundries Fab 9 USA, VT, Essex Junction 200 90–350 40,000
GlobalFoundries Fab 10 USA, NY, East Fishkill 2.5 2002 300 22–90 14,000
GlobalFoundries Fab 1[26] Germany, Dresden 2.5 2005 300 28–45 80,000
GlobalFoundries Fab 7[26] Singapore 300 40–130 50,000
GlobalFoundries Fab 8[26] USA, NY, Malta 4.6 2012 300 14 / 22 / 28 60,000
GlobalFoundries Fab 2[27] Singapore 200 350–600 50,000
GlobalFoundries Fab 3/5[27] Singapore 200 180–350 54,000
GlobalFoundries Fab 3E[27] Singapore 200 180 34,000
GlobalFoundries Fab 6[27] Singapore 200 110–180 45,000
Hindustan Semiconductor Manufacturing India, Gujarat 6 300 14 20,000
Toshiba/SanDisk Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[28] 1992 Flash
Toshiba/SanDisk Fab 5[28] Japan, Mie 2011 300 15[29] Flash
TSMC Fab 2[30] Taiwan, Hsinchu 150
TSMC Fab 3 Taiwan, Hsinchu 200
TSMC Fab 5 Taiwan, Hsinchu 200
TSMC Fab 6 Taiwan, Tainan 200
TSMC Fab 8 Taiwan, Hsinchu 200
TSMC Fab 10 China, Shanghai 200
TSMC Fab 12 Taiwan, Hsinchu 300 28
TSMC Fab 12(P4) Taiwan, Hsinchu 300 20
TSMC Fab 12(P6) Taiwan, Hsinchu 300 16
TSMC Fab 12(P7) Taiwan, Hsinchu (future) 300 16
TSMC Fab 14 Taiwan, Tainan 300 20
TSMC Fab 14(B) Taiwan, Tainan 300 16
TSMC WaferTech Fab 11 USA, WA, Camas 200
TSMC Fab 15[31] Taiwan, Taichung 2011 300 20
TSMC Fab 15(B) Taiwan, Taichung (future) 300 10
UMC Fab 6A Taiwan, Hsinchu 150
UMC Fab 8AB Taiwan, Hsinchu 200
UMC Fab 8C Taiwan, Hsinchu 200
UMC Fab 8D Taiwan, Hsinchu 200
UMC Fab 8E Taiwan, Hsinchu 200
UMC Fab 8F Taiwan, Hsinchu 200
UMC Fab 8S Taiwan, Hsinchu 200
UMC Fab 12A Taiwan, Tainan 300 55,000
UMC Fab 12i Singapore 300 45,000
Vanguard International Semiconductor Fab 1 Taiwan, Hsinchu 200
Vanguard International Semiconductor Fab 2 Taiwan, Hsinchu 200
IM Flash IM Flash[32] Singapore 2011 300 25
IM Flash IM Flash USA, UT, Lehi 300 20
IM Flash IM Flash USA, VA, Manassas
NXP Semiconductors ATMC[33] USA, TX, Austin 1995 200 90
NXP Semiconductors Chandler Fab[34] USA, AZ, Chandler 1.1[35] 1993 200 180
NXP Semiconductors Oak Hill Fab[36] USA, TX, Austin .8[37] 1991 200 250
Nexperia DHAM[38] Germany, Hamburg 200
NXP Semiconductors China, Jilin
NXP Semiconductors UK, Manchester
NXP Semiconductors ICN8 Netherlands, Nijmegen
NXP Semiconductors SSMC Singapore
Altis Semiconductor ACL-AMF France, Corbeil-Essonnes 1991 200 130–350
LFoundry (former Micron)[39] Italy, Avezzano 1995 200 90–150 40.000
Raytheon Systems Ltd UK, Glenrothes, Scotland 1960 100 CMOS on SiC
STMicroelectronics AMK8 (second, newer fab) Singapore, Ang Mo Kio 1995 200
STMicroelectronics AMJ9 (first fab, initially owned by SGS Microelettronica) Singapore, Ang Mo Kio 1984[40] 150
STMicroelectronics Crolles 1 / Crolles 200 France, Crolles 1993 200
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 2003 300 90
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 300 65
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 300 45
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 300 32
STMicroelectronics Tours France, Tours 200
STMicroelectronics (formerly SGS-ATES) R2 (upgraded in 2001 from R1) Italy, Agrate Brianza 1963 200
STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy, Agrate Brianza 1963 200
STMicroelectronics Catania Italy, Catania 1997 200
STMicroelectronics Rousset France, Rousset 2000 200
SUNY Poly CNSE NanoFab 300 North[41] USA, NY, Albany .175 2005 300 65
SUNY Poly CNSE NanoFab 300 North[41] USA, NY, Albany 300 45
SUNY Poly CNSE NanoFab 300 North[41] USA, NY, Albany 300 32
SUNY Poly CNSE NanoFab 300 North[41] USA, NY, Albany 300 22
SUNY Poly CNSE NanoFab 300 South[41] USA, NY, Albany .050 2004 300 22
SUNY Poly CNSE NanoFab 200[42] USA, NY, Albany .016 1997 200
SUNY Poly CNSE NanoFab Central[41] USA, NY, Albany .150 2009 300 22
Powerchip Semiconductor Memory Foundry[43] Taiwan, Hsinchu 300 90
Powerchip Semiconductor Memory Foundry[43] Taiwan, Hsinchu 300 70
Fairchild Semiconductor Now ONSEMI USA, PA, Mountain Top 1960/1997 200 350
Fairchild Semiconductor Now ONSEMI USA, ME, South Portland 1960/1997 200 350
SMIC S1 Mega Fab (S1A/S1B/S1C)[44] China, Shanghai 200 350-90 114,000[45]
SMIC S2 (Fab 8)[44] China, Shanghai 300 45/40-32/28 20,000[45]
SMIC SN1[44] China, Shanghai (plan) 300 70,000[46]
SMIC B1 Mega Fab (Fab 4, Fab 6)[44] China, Beijing 2004 300 180-90/55 50,000[45]
SMIC B2A[44] China, Beijing 3.59[47] 2014 300 45/40-32/28 35,000[45]
SMIC Fab 7[44] China, Tianjin 2004 200 350-90 47,000[45]
SMIC Fab 15[44] China, Shenzhen 2014 200 350-90 50,000[45]
SMIC SZ (Fab 16A/B)[44] China, Shenzhen 2017 (plan) 300 40,000[46]
Winbond Memory Product Foundry[48] Taiwan, Taichung 300 46
Winbond Memory Product Foundry[48] Taiwan, Taichung 300
MagnaChip F-5[49] South Korea, Cheongju 2005 200 130
ProMOS Fab 4[50][51] Taiwan, Taichung 1.6 300 70
TSI Semiconductors Heilbronn Germany, Heilbronn 150 10,000
TSI Semiconductors[52] Roseville fab[53] USA, CA, Roseville 200
SK Hynix M8 South Korea, Cheongju 200 Foundary
SK Hynix M10 South Korea, Icheon 300 DRAM
SK Hynix M11 South Korea, Cheongju 300 NAND Flash
SK Hynix M12 South Korea, Cheongju 300 NAND Flash
SK Hynix C1 China, Wuxi 300 100,000[46] DRAM
SK Hynix C2 China, Wuxi 300 70,000[46] DRAM
SK Hynix M14 South Korea, Icheon 300 DRAM, NAND Flash
CSMC [54] China, Wuxi 200-300 130-above
Fujitsu Fab No. 1[55] Japan, 1500 Tadocho Mizono, Kuwana, Mie[56] 2005 300 65 15,000
Fujitsu Fab No. 1[55] Japan, Mie 2005 300 90 15,000
Fujitsu Fab No. 2[55] Japan, Mie 2007 300 65 25,000
Fujitsu Fab No. 2[55] Japan, Mie 2007 300 90 25,000
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 65
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 90
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 130
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 180
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 250
Cypress Semiconductor Fab25 USA, TX, Austin 1994 200 Flash / Logic
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 1991 350
ON Semiconductor Gresham[57] USA, OR, Gresham 200 110
ON Semiconductor (former AMI Semiconductor) Pocatello[58] USA, ID, Pocatello 200 350
ON Semiconductor Oudenaarde Belgium, Oudenaarde 150 350 4,000
ON Semiconductor ISMF Malaysia, Seremban 150 350 80,000 Discrete
ON Semiconductor Niigata Japan, Niigata 150 350
ON Semiconductor Roznov Czech Republic, Roznov 150 5000
Texas Instruments (former National Semiconductor) South Portland[59] USA, ME, South Portland .932 1997 350
Texas Instruments (former National Semiconductor) South Portland[59] USA, ME, South Portland 250
Texas Instruments (former National Semiconductor) South Portland[59] USA, ME, South Portland 180
Samsung S3-Line[60] South Korea, Hwaseong 10.2 Under construction 300 20 200,000 DRAM, VNAND
Samsung S2-Line[61] USA, TX, Austin 2011 300 14 62,000 Microprocessors
Samsung F1x1[62] China, Xian 2.3[63] 2014 300 20 100,000 VNAND
TowerJazz Fab 1[64] Israel, Migdal Haemek 1989
TowerJazz Fab 2[64] Israel, Migdal Haemek 2003
TowerJazz Fab 3[64] USA, CA, Newport Beach 1967 130–500
TowerJazz – TPSCo Fab 5[64] Japan, Tonami 200
TowerJazz – TPSCo Fab 7[64] Japan, Uozo 200
TowerJazz – TPSCo Fab 6[64] Japan, Arai 300
Texas Instruments FFAB Germany, Freising 200
Texas Instruments MFAB USA, ME, ? 200
Texas Instruments RFAB USA, TX, Richardson 2009 300
Texas Instruments DMOS6 USA, TX, Dallas 300
Texas Instruments DMOS5 USA, TX, Dallas 200
Texas Instruments DFAB USA, TX, Dallas 1964 150/200
Texas Instruments SFAB USA, TX, Sherman 150
Texas Instruments GFAB UK, Scotland, Greenock 150/200 40,000
Texas Instruments MIHO8 Japan, Miho 200
Texas Instruments Aizu Japan, Aizu 200
Texas Instruments Chengdu (CFAB) China, Chengdu 200
General Motors Components Holdings Fab III USA, IN, Kokomo 125/200 500+
Infineon Technologies Villach Austria, Villach 1970[65] 150/200/300
Infineon Technologies Dresden Germany, Dresden 1994/2011[66] 200/300 90
Infineon Technologies Kulim[67] Malaysia, Kulim 2006[68] 200/300
Infineon Technologies Kulim 2 Malaysia, Kulim 2015 200/300
Infineon Technologies Regensburg[69] Germany, Regensburg 1959
Bosch Germany, Reutlingen 1995[70] 150 ASIC, analog, power
Bosch WaferFab Germany, Reutlingen 2010[70] 200 30,000 ASIC, analog, power, MEMS
Analog Devices Limerick Ireland, Limerick 200
Analog Devices Wilmington USA, MA, Wilmington 200/150
Analog Devices (formerly Linear Technology) Hillview USA, CA, Milipitas 150
Analog Devices (formerly Linear Technology) Camas USA, WA, Camas 150
X-Fab Erfurt Germany, Erfurt 200[71] 600–1000[71] 11200–[71]
X-Fab Dresden Germany, Dresden 200[72] 350–1000[72] 6000–[72]
X-Fab Itzehoe Germany, Itzehoe 200[73] 13000–[73] MEMS
X-Fab Kuching Malaysia, Kuching 200[74] 130–350[74] 27000–[74]
X-Fab Lubbock USA, TX, Lubbock 200[75] 600–1000[75] 15000–[75]
Teledyne DALSA Teledyne DALSA Semiconductor Canada, Bromont, QC 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
Unitec Blue[76] Argentina, Chascomús 1.2[77]
ams[78] FAB B Austria, Unterpremstaetten 200 350
HuahongGrace[79] FAB China, Shanghai 300 90
ASMC[80] FAB 1/2 China, Shanghai 200 600 BCD, HV
ASMC[80] FAB 3 China, Shanghai 200 250
Beilling[81] China, Shanghai 150 1200 BiCMOS, CMOS
Diodes Incorporated[82] OFAB UK, Oldham 150
Diodes Incorporated[82] KFAB USA, MO, Lee's Summit
Polar Semiconductor[83] FAB1 USA, MN, Bloomington 150 BCD, HV
Polar Semiconductor[83] FAB2 USA, MN, Bloomington 200 BCD, HV, GMR

Closed

List of old fabs that closed:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Technology/products Ended production
EI Niš Ei Poluprovodnici Serbia, Niš 1962 100 2000
Fairchild Semiconductor (former National Semiconductor) West Jordan USA, UT, West Jordan 1977 150 2015[84]
Freescale Semiconductor Toulouse Fab[85] France, Toulouse 1969 150 650 2012[86]
Freescale Semiconductor Sendai Fab[87] Japan, Sendai 1987 150 500 ?
Hynix E-4 USA, OR, Eugene 1.3 2007 200 30,000 2008[88]
Intel Fab 8[9] Israel, Jerusalem 1985 150 Microprocessors, Chipsets, Microcontrollers[10] 2007
Intel Fab 17[1][2] USA, MA, Hudson 1998 200 130 Chipsets and other[3] 2014
LFoundry (former Renesas Electronics)[89] Germany, Landshut ? 200 2011
LFoundry (former Atmel)[90] France, Rousset ? 200 25.000[91] 2014
MOS Technology,
Commodore Semiconductor,
GMT Microelectronics		 USA, PA, Audubon 1969
1976
1995		 1000 1976
1992 [92]
2001
Texas Instruments HFAB USA, TX, Houston ? 150 2012[93]
Texas Instruments (former National Semiconductor) Arlington USA, TX, Arlington 1985 150 2010
TowerJazz Fab 4[64] Japan, Nishiwaki City ? ?

See also

References

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  2. 1 2 3 4 5 6 7 8 9 10 "Intel Global Manufacturing Facts" (PDF). Download.intel.com. Retrieved 2017-03-22.
  3. 1 2 3 4 5 6 7 8 9 10 11 "Intel Global Manufacturing Facts" (PDF). Download.intel.com. Retrieved 2017-03-22.
  4. ↑ "Intel Announces Multi-Billion-Dollar Investment in Next-Generation Manufacturing in U.S. | Intel Newsroom". Newsroom.intel.com. Retrieved 2017-03-22.
  5. ↑ Pallatto, John. "Intels $3 Billion Fab Now Open for Business". Eweek.com. Retrieved 2017-03-22.
  6. ↑ "Intel to Invest More than $5 Billion to Build New Factory in Arizona | Intel Newsroom". Newsroom.intel.com. Retrieved 2017-03-22.
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  16. ↑ Apple buys former Maxim chip fab in North San Jose, neighboring Samsung Semiconductor; December 14, 2015.
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  82. 1 2 "Diodes Incorporated: Analog, Discrete, Logic, and Mixed-Signal ICs". Diodes.com. Retrieved 2017-03-22.
  83. 1 2 "Polar Semiconductor, Inc - A Sanken Company". Polarsemi.com. Retrieved 2017-03-22.
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  88. ↑ "Hynix will close 200mm fab in Oregon | EE Times". EETimes. Retrieved 2017-06-20.
  89. ↑ "Lfoundry continues based on Rousset fab". EE Times. 1999-02-22. Retrieved 2017-03-22.
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  91. ↑ Peter Clarke (2014-01-02). "Lfoundry Rousset fab closes with loss of 600 jobs". Electronics EETimes. Retrieved 2017-03-22.
  92. ↑ Superfund Site: COMMODORE SEMICONDUCTOR GROUP LOWER PROVIDENCE TOWNSHIP, PA
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