Stanene
Stanene[1][2][3] is a 2D material and a 2D topological insulator. Stanene is composed of tin atoms arranged in a single, hexagonal layer, in a manner similar to graphene. Its name combes stannum (the Latin name for tin) with the suffix -ene used by graphene.[4]
Stanene as a 2D topological insulator was theoretically predicted by Yao's group in 2011,[5] and its functionalized derivations as topological insulators were predicted by Zhang's group in 2013.[6] Both may display dissipationless currents at their edges near room temperature.
The addition of fluorine atoms to the tin lattice could extend the operating temperature up to 100 °C.[7] This would make it practical for use in integrated circuits to make smaller, faster and more energy efficient computers. Research is ongoing in Germany and China, as well as at laboratories at Stanford and UCLA.[8] The recent theoretical studies on electrical[9] and mechanical properties[10] suggests stanene as a contender to the silicon counterparts in nano-electronics.
Synthesis
The synthesis and study of optical properties of stanene was claimed by researchers at the Indian Institute of Technology Bombay.[11] Stanene synthesis was reported by a second group in 2015, using molecular beam epitaxy on a substrate of bismuth telluride[12][13]
Reactivity
First principle calculations have predicted that stanene is very reactive against common air pollutants such as NOx and COx and is able to trap and dissociate them at low temperatures.[14]
References
- ↑ DOE/SLAC National Accelerator Laboratory (2013-11-21). "Will 2-D tin be the next super material?". Sciencedaily.com. Retrieved 2014-01-10.
- ↑ "Will 2-D tin be the next super material?". Phys.org. 21 November 2013. Retrieved 2014-01-10.
- ↑ Garcia, J. C.; de Lima, D. B.; Assali, L. V. C.; Justo, J. F. (2011). "Group IV graphene- and graphane-like nanosheets". J. Phys. Chem. C 115: 13242. doi:10.1021/jp203657w.
- ↑ Singh, Ritu (November 24, 2013). "Tin could be the next super material for computer chips". Zeenews.
- ↑ Liu, Cheng-Cheng; Jiang, Hua; Yao, Yugui (2011). "Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin" (pdf). Phys. Rev. B (Phys. Rev. B) 19 (84): 195430. doi:10.1103/PhysRevB.84.195430.
- ↑ Xu, Y.; Yan, B.; Zhang, H. J.; Wang, J.; Xu, G.; Tang, P.; Duan, W.; Zhang, S. C. (2013). "Large-Gap Quantum Spin Hall Insulators in Tin Films". Physical Review Letters 111 (13). doi:10.1103/PhysRevLett.111.136804.
- ↑ "Will 2-D Tin be the Next Super Material?" (Press release). Stanford University: SLAC National Accelerator Laboratory. November 21, 2013.
- ↑ Markoff, John (January 9, 2014). "Designing the Next Wave of Computer Chips". New York Times. Retrieved January 10, 2014.
- ↑ van den Broek, Bas, et al. "Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization." 2D Materials 1.2 (2014): 021004.
- ↑ Mojumder, Satyajit, Abdullah Al Amin, and Md Mahbubul Islam. "Mechanical properties of stanene under uniaxial and biaxial loading: A molecular dynamics study." Journal of Applied Physics 118.12 (2015): 124305. http://dx.doi.org/10.1063/1.4931572
- ↑ Stanene: Atomically Thick Free-standing Layer of 2D Hexagonal Tin, May 20, 2015
- ↑ Physicists announce graphene’s latest cousin: stanene Chris Cesare Nature News 2015 doi:10.1038/nature.2015.18113
- ↑ Epitaxial growth of two-dimensional stanene Feng-feng Zhu , Wei-jiong Chen,Yong Xu,Chun-lei Gao, Dan-dan Guan,Can-hua Liu,Dong Qian,Shou-Cheng Zhang& Jin-feng Jia Nature Materials (2015) doi:10.1038/nmat4384
- ↑ Takahashi, L.; Takahashi, K. (2015). "Low temperature pollutant trapping and dissociation over two-dimensional tin.". Physical Chemistry Chemical Physics C 17: 21394–21396. doi:10.1039/C5CP03382A.
External links
- Choi, Charles Q. (December 4, 2013). "Could Atomically Thin Tin Transform Electronics?". Scientific American.
- Johnson, R. Colin (3 December 2013). "Stanene May Be Better Than Graphene". EE Times.
- Myslewski, Rik (4 December 2013). "OHM MY GOD! Move over graphene, here comes '100% PERFECT' stanene". The Register.
- "Tin-based stanene could conduct electricity with 100 percent efficiency". gizmag. 2013-12-01. Retrieved 2013-12-05.
- Vandenberghe, William (2013-10-25). "Quantum Transport for future Nano-CMOS Applications : TFETs and 2D topological insulators" (PDF). University of Texas at Dallas. Retrieved 2014-01-03.