Hafnium(IV) silicate
| Names | |
|---|---|
| Preferred IUPAC name
Hafnium(IV) silicate | |
| Systematic IUPAC name
Hafnium(4+) silicate | |
| Identifiers | |
| 13870-13-8 | |
| ChemSpider | 16470992  |
| Jmol interactive 3D | Image |
| PubChem | 17979268 |
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| Properties | |
| HfO4Si | |
| Molar mass | 270.57 g·mol−1 |
| Appearance | Tetragonal crystal[1] |
| Density | 7.0 g/cm3 |
| Melting point | 2,758 °C (4,996 °F; 3,031 K) [1] |
| Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
| Infobox references | |
Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO4.
Thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices.[2] The addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant. Furthermore, it increases the crystallization temperature of amorphous films and further increases the material's thermal stability with Si at high temperatures.[3] Nitrogen is sometimes added to hafnium silicate for improving the thermal stability and electrical properties of devices.
References
- 1 2 Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4-66. ISBN 1439855110.
- ↑ Mitrovic, I.Z.; Buiu, O.; Hall, S.; Bungey, C.; Wagner, T.; Davey, W.; Lu, Y. (April 2007). "Electrical and structural properties of hafnium silicate thin films". Microelectronics Reliability 47 (4-5): 645–648. doi:10.1016/j.microrel.2007.01.065.
- ↑ J.H. Choi; et al. (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.
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