Antimony telluride
| Names | |
|---|---|
| Other names
antimony telluride, antimony(III) telluride, antimony telluride, diantimony tritelluride | |
| Identifiers | |
1327-50-0  | |
| ChemSpider | 21241420 |
| Jmol interactive 3D | Image |
| PubChem | 6369653 |
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| Properties | |
| Sb2Te3 | |
| Molar mass | 626.32 g·mol−1 |
| Appearance | grey solid |
| Density | 6.50 g cm−3[1] |
| Melting point | 580 °C (1,076 °F; 853 K)[1] |
| Hazards | |
| US health exposure limits (NIOSH): | |
| PEL (Permissible) |
TWA 0.5 mg/m3 (as Sb)[2] |
| REL (Recommended) |
TWA 0.5 mg/m3 (as Sb)[2] |
| Related compounds | |
| Other anions |
Sb2O3 Sb2S3 Sb2Se3 |
| Other cations |
As2Te3 Bi2Te3 |
| Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
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| Infobox references | |
Antimony telluride is an inorganic compound with the chemical formula Sb2Te3. It is a grey, crystalline solid, although its melting point, density and colour may depend on the crystalline form it adopts.
Synthesis
Antimony telluride can be formed by the reaction of antimony with tellurium at 500–900 °C.[1]
- 2Sb(l) + 3Te(l) → Sb2Te3(l)
Applications
Like other binary chalcogenides of antimony and bismuth, Sb2Te3 has been investigated for its semiconductor properties. It can be transformed into both n-type and p-type semiconductors by doping with an appropriate dopant.[1]
Sb2Te3 forms the pseudobinary intermetallic system germanium-antimony-tellurium with germanium telluride, GeTe.[3]
Like bismuth telluride, Bi2Te3, antimony telluride has a large thermoelectric effect and is therefore used in solid state refrigerators.[1]
References
- 1 2 3 4 5 Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. pp. 581–582. ISBN 0-08-037941-9.
- 1 2 "NIOSH Pocket Guide to Chemical Hazards #0036". National Institute for Occupational Safety and Health (NIOSH).
- ↑ Wełnic, Wojciech; Wuttig, Matthias (2008). "Reversible switching in phase-change materials". Materials Today 11 (6): 20–27. doi:10.1016/S1369-7021(08)70118-4.
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