A-RAM

Computer memory types
Volatile
RAM
DRAM (e.g., DDR SDRAM) SRAM
In development T-RAM Z-RAM
Historical
Williams–Kilburn tube (1946–47) Delay line memory (1947) Selectron tube (1953) Dekatron
Non-volatile
ROM
Mask ROM PROM EPROM EEPROM
NVRAM
Flash memory Solid-state storage
Early stage NVRAM
nvSRAM FeRAM MRAM PRAM
Mechanical
Magnetic tape Hard disk drive Optical disc drive
In development
3D XPoint CBRAM SONOS RRAM Racetrack memory NRAM Millipede memory FJG RAM
Historical
Paper data storage (1725) Drum memory (1932) Magnetic-core memory (1949) Plated wire memory (1957) Thin-film memory (1962) Twistor memory (~1968) Bubble memory (~1970)

Advanced-Random Access Memory (A-RAM) is a type of dynamic random-access memory based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada, UGR (Spain) in collaboration with the Centre National de la Recherche Scientifique, CNRS (France). It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate FETs (MuFETs).

The conventional 1-Transistor + 1-Capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. Beyond the 45 nm node, the DRAM industry will need new concepts avoiding the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, where the A-RAM is included, replaces the storage capacitor for the floating body of SOI transistors to store the charge.

References

Patent number: FR09/52453, "Point mémoire RAM à un transistor", Institut National de la Propriété Industrielle.
"A-RAM: Novel capacitor less DRAM memory". 2009 IEEE International SOI Conference. Foster City, CA.

External links

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