List of semiconductor fabrication plants

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This is a list of semiconductor fabrication plants:

Company Site name Location Plant start-up cost (in US$ billions) Starting of production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Technology/products MES EI
DongbuHiTek Fab1 South Korea, Bucheon 200 150-350 Analog & Power, High Voltage CMOS, Mixed-Signal
DongbuHiTek Fab2 South Korea, Eumsung 200 90-350 Analog & Power, Mixed-Signal, NVM, CIS, High Voltage CMOS, sFlash
Silterra Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90-180 28,000 - 30,000 CMOS/HV/MEMS/RF/Logic/Analog/Mix Signal MES EI
Microchip Fab 2 USA, AZ, Tempe 1994 200
Microchip Fab 4 USA, OR, Gresham 2004 200
Spansion Fab25 USA, TX, Austin 1994 200 Flash
Nanya Fab Taiwan 199x 300 DRAM
Intel D1D[1][2] USA, OR, Hillsboro 2003 300 14 / 22
Intel D1C[1][2] USA, OR, Hillsboro 2001 300 14 / 22
Intel D1X[3][2] USA, OR, Hillsboro 2013 300 14
Intel Fab 12[1][2] USA, AZ, Chandler 1996 300 65
Intel Fab 32[1][4] USA, AZ, Chandler 3 2007 300 45
Intel Fab 32[1][2] USA, AZ, Chandler 300 22 / 32
Intel Fab 42[5][6] [2] USA, AZ, Chandler 5 2013 (plan), not started[7] 300 14
Intel Fab 11x[1][2] USA, NM, Rio Rancho 2002 300 32
Intel Fab 11x[1][2] USA, NM, Rio Rancho 2002 300 45
Intel Fab 17[1][2] USA, MA, Hudson 1998 200
Intel Fab 10[1] Ireland, Leixlip 1994 200
Intel Fab 14[1] Ireland, Leixlip 1998 200
Intel Fab 24[1][2] Ireland, Leixlip 2006 300 65
Intel Fab 24[1][2] Ireland, Leixlip 2006 300 90
Intel Fab 28[1][2] Israel, Kiryat Gat 2008 300 22 / 45
Intel Fab 68[1][8] China, Dalian 2.5 2010 300 65
Maxim San Antonio[9] USA, TX, San Antonio 2003 200
Maxim X3[10] USA, CA, San Jose
Maxim MaxFabNorth[11] USA, OR, Beaverton
Motorola MOTOFAB1[12] Mexico, Guadalajara 2002
Micron Fab 6 USA, Virginia, Manassas 300 25[13] DRAM, NAND FLASH, NOR
Micron Fab 4 [14] USA, Idaho, Boise 300 RnD
Micron Fab 13 [15] Singapore, Singapore 200 NOR
Micron Fab 10 [16] Singapore, Singapore 300 NAND FLASH
Micron Fab 7 (Formerly TECH Semiconductor, Singapore)[17] Singapore, Singapore 300 NAND FLASH
Micron Fab 15 (Formerly Elpida Memory, Hiroshima)[18] Hiroshima, Japan 300 20 nanometer and under DRAM
Micron Fab 16 (Formerly Rexchip, Taichung)[19] Taichung, Taiwan 300 30 nanometer and under DRAM
Inotera Fab 11 (Taoyuan)[20] Taoyuan, Taiwan 300 20 nanometer and under DRAM
GlobalFoundries Fab 1[21] Germany, Dresden 2.5 2005 300 45 and under 80,000
GlobalFoundries Fab 7[22] Singapore 300 40 - 130 50,000
GlobalFoundries Fab 8[23] USA, NY, Malta 4.6 2012 300 28-22-14 60,000
GlobalFoundries Fab 2[24] Singapore 200 350 - 600 50,000
GlobalFoundries Fab 3/5[25] Singapore 200 180 - 350 54,000
GlobalFoundries Fab 3E[26] Singapore 200 180 34,000
GlobalFoundries Fab 6[27] Singapore 200 110 - 180 45,000
GlobalFoundries Fab 9[28] UAE, Abu Dhabi 2015
Toshiba/SanDisk 800 Yamanoisshikicho, Yokkaichi, Mie, Japan[29] 1992 Flash
Toshiba/SanDisk Fab 5[29] 800 Yamanoisshikicho, Yokkaichi, Mie, Japan 2011 Flash
TSMC Fab 2[30] Taiwan, Hsinchu 150
TSMC Fab 3 Taiwan, Hsinchu 200
TSMC Fab 5 Taiwan, Hsinchu 200
TSMC Fab 6 Taiwan, Tainan 200
TSMC Fab 8 Taiwan, Hsinchu 200
TSMC Fab 10 China, Shanghai 200
TSMC Fab 12 Taiwan, Hsinchu 300 28
TSMC Fab 12 Taiwan, Hsinchu 300 22
TSMC Fab 12(P4) Taiwan, Hsinchu 300
TSMC Fab 12(P5) Taiwan, Hsinchu 2012 300
TSMC Fab 14 Taiwan, Tainan 300 28
TSMC WaferTech Fab 11 USA, WA, Camas 200
TSMC Fab 15[31] Taiwan, Taichung 2011Q4 300 28
TSMC Fab 15[31] Taiwan, Taichung 2011Q4 300 20
TSMC Fab 16 Taiwan, Taichung Future 300 28
UMC Fab 6A Taiwan, Hsinchu 150
UMC Fab 8AB Taiwan, Hsinchu 200
UMC Fab 8C Taiwan, Hsinchu 200
UMC Fab 8D Taiwan, Hsinchu 200
UMC Fab 8E Taiwan, Hsinchu 200
UMC Fab 8F Taiwan, Hsinchu 200
UMC Fab 8S Taiwan, Hsinchu 200
UMC Fab 12A Taiwan, Tainan 300 55,000
UMC Fab 12i Singapore 300 45,000
Vanguard International Semiconductor Corporation Fab 1 Taiwan, Hsinchu 200
Vanguard International Semiconductor Corporation Fab 2 Taiwan, Hsinchu 200
IM Flash IM Flash[32] Singapore 2011-04 300 25
IM Flash IM Flash USA, UT, Lehi 300 20
IM Flash IM Flash USA, VA, Manassas
NXP Semiconductors DHAM[33] Germany, Hamburg
NXP Semiconductors China, Jilin
NXP Semiconductors UK, Manchester
NXP Semiconductors ICN8 Netherlands, Nijmegen
NXP Semiconductors SSMC Singapore
Altis Semiconductor ACL-AMF France, Corbeil-Essonnes 1991 200 130 - 350
LFoundry FAB7 France, Rousset 1995 200
IBM Building 323[34][35] USA, NY, East Fishkill 2.5 2002 300 22
IBM Burlington Fab USA, VT, Essex Junction 200
STMicroelectronics Crolles 1 / Crolles 200 France, Crolles 1993 200
STMicroelectronics Crolles2 France, Crolles 2003 300 90
STMicroelectronics Crolles2 France, Crolles 300 65
STMicroelectronics Crolles2 France, Crolles 300 45
STMicroelectronics Crolles2 France, Crolles 300 32
STMicroelectronics Agrate Italy, Agrate Brianza 1963 as ATES 200
STMicroelectronics Catania Italy, Catania 1997 200
STMicroelectronics Rousset France, Rousset 2000 200
CNSE NanoFab 300 North[36] USA, NY, Albany .175 2005 300 65
CNSE NanoFab 300 North[36] USA, NY, Albany 300 45
CNSE NanoFab 300 North[36] USA, NY, Albany 300 32
CNSE NanoFab 300 North[36] USA, NY, Albany 300 22
CNSE NanoFab 300 South[36] USA, NY, Albany .050 2004 300 22
CNSE NanoFab 200 [37] USA, NY, Albany .016 1997 200
CNSE NanoFab Central [36] USA, NY, Albany .150 2009 300 22
Powerchip Semiconductor Memory Foundry[38] Taiwan, Hsinchu 300 90
Powerchip Semiconductor Memory Foundry[38] Taiwan, Hsinchu 300 70
Fairchild Semiconductor Fab 8 USA, PA, Mountaintop 1997 200 350
Freescale Semiconductor ATMC[39] USA, TX, Austin 1995 200 90
Freescale Semiconductor Chandler Fab[40] USA, AZ, Chandler 1.1[41] 1993 200 180
Freescale Semiconductor Oak Hill Fab[42] USA, TX, Austin .8[43] 1991 200 250
Freescale Semiconductor Sendai Fab[44] Japan, Sendai 1987 150 500
SMIC S1 Mega Fab[45] China, Shanghai 200 90
SMIC S1 Mega Fab[45] China, Shanghai 200 350
SMIC S1 Mega Fab[45] China, Shanghai 200 90
SMIC S2[45] China, Shanghai 300 40/45
SMIC B1 Mega Fab[45] China, Beijing 2004 300 130
SMIC B1 Mega Fab[45] China, Beijing 2004 300 55/65
SMIC Fab 7[45] China, Tianjin 2004 200 350
SMIC Fab 7[45] China, Tianjin 200 130
Winbond Memory Product Foundry[46] Taiwan, Taichung 300 90
Winbond Memory Product Foundry[46] Taiwan, Taichung 300 65
MagnaChip F-5[47] South Korea, Cheongju 2005 200 130
ProMOS Fab 4[48][49] Taiwan, Taichung 1.6 300 70
TSI Semiconductors LLC Heilbronn Germany, Heilbronn 150 10,000
TSI Semiconductors LLC[50] Roseville fab[51] USA, CA, Roseville 200
Hynix M7[52] South Korea, Icheon 200
Hynix M8[52] South Korea, Cheongju 200
Hynix M9[52] South Korea, Cheongju 200
Hynix E1[52] USA, OR, Eugene 200
Hynix HC1[52] China, Wuxi 200
Fujitsu Fab No. 1[53] 1500 Tadocho Mizono, Kuwana, Mie, Japan[54] 2005 300 65 15,000
Fujitsu Fab No. 1[53] 1500 Tadocho Mizono, Kuwana, Mie, Japan 2005 300 90 15,000
Fujitsu Fab No. 2[53] 1500 Tadocho Mizono, Kuwana, Mie, Japan 2007 300 65 25,000
Fujitsu Fab No. 2[53] 1500 Tadocho Mizono, Kuwana, Mie, Japan 2007 300 90 25,000
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 65
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 90
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 130
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 180
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 250
Cypress Semiconductor Minnesota fab USA, MN, Bloomington 1991 350
ON Semiconductor Gresham[55] USA, OR, Gresham 200 130
ON Semiconductor (former AMI Semiconductor) Pocatello[56] USA, ID, Pocatello 200 350
ON Semiconductor (former AMI Semiconductor) Pocatello[56] USA, ID, Pocatello 200 5000
Texas Instruments (former National Semiconductor) South Portland[57] USA, ME, South Portland .932 1997 350
Texas Instruments (former National Semiconductor) South Portland[57] USA, ME, South Portland 250
Texas Instruments (former National Semiconductor) South Portland[57] USA, ME, South Portland 180
Fairchild Semiconductor (former National Semiconductor) West Jordan USA, UT, West Jordan 1977 150
Texas Instruments (former National Semiconductor) Arlington USA, TX, Arlington 1985 150
Samsung Line-16[58] South Korea, Hwaseong 10.2 2011 300 20
Samsung S2[59] USA, TX, Austin 2011 300 14 40,000
TowerJazz Fab 1[60] Israel, Migdal Haemek 1989
TowerJazz Fab 2[60] Israel, Migdal Haemek 2003
TowerJazz Fab 3[60] USA, CA, Newport Beach 1967 130-500
TowerJazz Fab 4 (Closed)[60] Japan, Nishiwaki City
Texas Instruments FFAB Germany, Freising 200
Texas Instruments MFAB USA, Maine 200
Texas Instruments RFAB USA, TX, Richardson 300
Texas Instruments DMOS6 USA, TX, Dallas 300
Texas Instruments DMOS5 USA, TX, Dallas 200
Texas Instruments DFAB USA, TX, Dallas 150/200
Texas Instruments SFAB USA, TX, Sherman 150
Texas Instruments GFAB UK, Scotland, Greenock 150/200 40,000
Texas Instruments MIHO8 Japan, Miho 200
Texas Instruments Aizu Japan, Aizu 200
Texas Instruments Chengdu China, Chengdu 200
General Motors Components Holdings Fab III USA, IN, Kokomo 125/200 500+
Infineon Technologies Villach Austria, Villach 1970[61] 150/200/300
Infineon Technologies Dresden Germany, Dresden 1994, refurnished 2011[62] 200/300 90
Infineon Technologies Kulim[63] Malaysia, Kulim 2006[64] 200/300
Infineon Technologies Kulim 2 Malaysia, Kulim future
Infineon Technologies Regensburg[65] Germany, Regensburg 1959
Bosch Germany, Reutlingen 1995[66] 150 ASIC, analog, power
Bosch WaferFab Germany, Reutlingen 2010[66] 200 30,000 ASIC, analog, power, MEMS
Analog Devices WaferFab Ireland, Limerick
Analog Devices WaferFab Massachusetts, Wilmington
X-Fab Erfurt Germany, Erfurt
X-Fab Dresden Germany, Dresden
X-Fab Itzehoe Germany, Itzehoe MEMS
X-Fab Kuching Malaysia, Kuching
X-Fab Lubbock USA, TX, Lubbock
Teledyne DALSA Teledyne DALSA Semiconductor Bromont, QC, Canada 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
Unitec Blue[67] Chascomús, Argentina 1.2[68]
Ams[69] FAB B Austria, Unterpremstaetten 200 350
Diodes Incorporated[70] OFAB UK, Oldham 150
Diodes Incorporated[71] KFAB USA, MO, Kansas City

Older fabs that closed :

Company name Plant name Plant location Plant cost (in US$ billions) Starting production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Ending production
Freescale Semiconductor Toulouse Fab[72] France, Toulouse 1969 150 650 2012[73]
Texas Instruments HFAB USA, Texas, Houston 150 2012[74]

See also

References

  1. ↑ 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.10 1.11 1.12 1.13 "Moore's Law Around the World, in Bricks and Mortar". 2010-10-21.
  2. ↑ 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 Intel Global Manufacturing Facts, 2011
  3. ↑
  4. ↑ Intels $3 Billion Fab Now Open for Business
  5. ↑ Intel to Invest More than $5 Billion to Build New Factory in Arizona
  6. ↑ Swartz, Jon (2011-03-29). "Intel's new $5 billion plant in Arizona has Obama's blessing". http://www.usatoday.com. Retrieved 2011-03-28.
  7. ↑ Intel shelves delayed Fab 42 facility // Bit-tech, 2014-01-15 "Intel's Chuck Mulloy confirmed that the facility will be 'left vacant for now' .. has not yet been outfitted with fabrication equipment - 'the actual tools, the expensive stuff, are not in there,' "
  8. ↑ Intel Opens $2.5 Billion Fab Plant in China
  9. ↑
  10. ↑
  11. ↑
  12. ↑ Motorola Plant Reference in a book
  13. ↑ "Company Spotlight: Micron Technology, Inc." SemiAccurate. 2010-12-30. Retrieved 2014-10-02
  14. ↑
  15. ↑
  16. ↑
  17. ↑
  18. ↑
  19. ↑
  20. ↑
  21. ↑
  22. ↑
  23. ↑
  24. ↑
  25. ↑
  26. ↑
  27. ↑
  28. ↑ Cooper, Robin K. (2011-05-24). "GlobalFoundries to build Abu Dhabi plant in 2012".
  29. ↑ 29.0 29.1 Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan
  30. ↑ "Fab Locations". Taiwan Semiconductor Manufacturing Company Limited. Retrieved 2012-04-21.
  31. ↑ 31.0 31.1 "TSMC Acquires PSC Land for New Fab Construction". Taiwan Economic News. 2011-01-13. Retrieved 2011-01-13.
  32. ↑ "Intel, Micron open US$3 billion NAND flash facility in Singapore". DigiTimes. 2011-04-11. Retrieved 2011-04-11.
  33. ↑ About NXP
  34. ↑ "IBM's Cutting-Edge $2.5 Billion Fab Reaps $500 Million in NY Incentives". The Site Selection. 2000-11-01. Retrieved 2011-04-16.
  35. ↑ "IBM's $2.5B fab turns Hudson into silicon valley". EE Times. 2002-08-05. Retrieved 2011-05-27.
  36. ↑ 36.0 36.1 36.2 36.3 36.4 36.5 300mm Wafer Fabrication
  37. ↑ 200mm Wafer Fabrication
  38. ↑ 38.0 38.1 Foundry Services
  39. ↑ Freescale Austin Technology & Manufacturing Center
  40. ↑ Freescale Chandler Fab
  41. ↑ "Motorola Restarts MOS 12 Facility Expansion". Electronic News. 1999. Retrieved 2011-10-06.
  42. ↑ Freescale Oak Hill Fab
  43. ↑ "R & D Collaboration on Trial: The Microelectronics and Computer Technology Corporation". Harvard Business School Press. 1994. Retrieved 2011-10-06.
  44. ↑ Freescale Sendai Fab
  45. ↑ 45.0 45.1 45.2 45.3 45.4 45.5 45.6 45.7 SMIC's Fabs
  46. ↑ 46.0 46.1 Memory Product Foundry
  47. ↑ MagnaChip ups capex, tips 130-nm process
  48. ↑ "ProMOS Goes for 70nm DRAM". SOFTPEDIA. 2007-08-13. Retrieved 2011-05-27.
  49. ↑ "Record fab construction reached in second quarter, says report". EE Times. 2004-07-02. Retrieved 2011-05-31.
  50. ↑ Anderson, Mark. "Telefunken no more: Company changes name to TSI Semiconductors". http://www.bizjournals.com''. Sacramento Business Journal. Retrieved 2014-06-30.
  51. ↑ "Renesas sells U.S. fab to Telefunken". EE Times. 2011-03-30. Retrieved 2011-05-31.
  52. ↑ 52.0 52.1 52.2 52.3 52.4 Hynix to Accelerate Retirement of 200mm Fabrication Plants
  53. ↑ 53.0 53.1 53.2 53.3 Fujitsu to Construct New Fab for Logic Chips Employing 65nm Process Technology and 300mm Wafers
  54. ↑ Home > Worldwide > Japan (HQ) > Plants
  55. ↑ Gresham, USA
  56. ↑ 56.0 56.1 Pocatello, USA
  57. ↑ 57.0 57.1 57.2 South Portland, Maine
  58. ↑ "SAMSUNG BEGINS OPERATION OF WORLD’S LARGEST MEMORY FAB". Samsung Village. 2011-09-22. Retrieved 2011-10-06.
  59. ↑ "Samsung's Austin Logic Line Breaks Record Achievements". Samsung. 2011-12-05. Retrieved 2012-05-18.
  60. ↑ 60.0 60.1 60.2 60.3 TowerJazz Manufacturing
  61. ↑ http://www.infineon.com/export/sites/default/media/regions/at/brochures/Infineon_Technologies_Austria_AG_Imagebroschuere_English.pdf
  62. ↑ http://www.infineon.com/dgdl/IFD+_Broschuere2012.pdf?folderId=db3a3043134f57b0011352cc4bc20107&fileId=db3a304314dca3890115046d8cd00c33
  63. ↑ http://www.infineon.com/cms/en/corporate/career/our-sites/country/malaysia/kulim/index.html
  64. ↑ http://www.eetimes.com/electronics-news/4064841/Infineon-launches-Kulim-fab
  65. ↑ http://www.infineon.com/dgdl/Rbg_d.pdf?folderId=db3a304412b91b910112baab5ed71fb4&fileId=db3a304412b91b910112baad8075224a
  66. ↑ 66.0 66.1 http://www.bosch-career.de/de/technikvision/download/Factsheet_WaferFab%20Reutlingen.pdf
  67. ↑ http://www.unitecblue.com.ar/planta.html
  68. ↑ Luciana Magalhaes. "Corporación América Buying Batista's Stake in SIX: Argentine Firm Buying 33% Stake in SIX Semicondutores". The Wall Street Journal.
  69. ↑ http://www.ams.com
  70. ↑ http://www.diodes.com
  71. ↑ http://www.diodes.com
  72. ↑ Freescale Toulouse Fab
  73. ↑ http://www.eetimes.com/document.asp?doc_id=1262319
  74. ↑ http://newscenter.ti.com/index.php?s=32851&item=123114

External links