Indium(III) sulfide

Indium(III) sulfide
Names
Other names
indium sesquisulfide, diindium trisulphide
Identifiers
12030-24-9 
ChemSpider 17617491 Yes
Jmol-3D images Image
PubChem 160966
Properties
In2S3
Molar mass 325.82 g/mol
Appearance red powder
Density 4.90 g/cm3, solid
Melting point 1,050.0 °C (1,922.0 °F; 1,323.2 K)
insoluble
Hazards
EU classification not listed
NFPA 704
Flammability code 4: Will rapidly or completely vaporize at normal atmospheric pressure and temperature, or is readily dispersed in air and will burn readily. Flash point below 23 °C (73 °F). E.g., propane Health code 3: Short exposure could cause serious temporary or residual injury. E.g., chlorine gas Reactivity code 2: Undergoes violent chemical change at elevated temperatures and pressures, reacts violently with water, or may form explosive mixtures with water. E.g., phosphorus Special hazards (white): no codeNFPA 704 four-colored diamond
4
3
2
Except where noted otherwise, data is given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
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Infobox references

Indium(III) sulfide is the inorganic compound with the formula In2S3. Three different structures ("polymorphs") are known: yellow, α-In2S3 has a defect cubic structure, red β-In2S3 has a defect spinel, tetragonal, structure, and γ-In2S3 has a layered structure. The red, β, form is considered to be the most stable form at room temperature, although the yellow form may be present depending on the method of production. Like related covalent solids, In2S3 is insoluble in all solvents. It is attacked by acids and by sulfide. It is slightly soluble in Na2S.[1]

Indium sulfide was the first indium compound ever described, being reported in 1863.[2] Reich and Richter determined the existence of indium as a new element from the sulfide precipitate.

Structure and properties

In2S3 features tetrahedral In(III) centers linked to four sulfido ligands. β-In2S3 is a diamagnetic, n-type semiconductor with an optical band gap of 2.1 eV. It has been proposed to replace the hazardous cadmium sulfide, CdS, as a buffer layer in solar cells.[3]

Production

Traditionally it was prepared in the chemical laboratory by direct combination of the elements. Production from volatile complexes of indium and sulfur for example dithiocarbamates (e.g. Et2InIIIS2CNEt2) have been explored as methods suitable for vapor deposition techniques.[4]

General references

References

  1. Indium Sulfide
  2. F. Reich, Th. Richter (1863). "Vorläufige Notiz über ein neues Metall". J. Prakt. Chem. 89: 441. doi:10.1002/prac.18630890156.
  3. N. Barreau, S. Marsillac, D. Albertini and J. C. Bernede (2002). "Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD". Thin Solid Films 403: 331–334. doi:10.1016/S0040-6090(01)01512-7.
  4. S. W. Haggata M Azad Malik, M. Motevalli, and P. O'Brien (1995). "Synthesis and Characterization of Some Mixed Alkyl Thiocarbamates of Gallium and Indium, Precursors for III/VI Materials: The X-ray Single-Crystal Structures of Dimethyl- and Diethylindium Diethyldithiocarbamate". Chem. Mater. 7 (4): 716–724. doi:10.1021/cm00052a017.