Gallium antimonide
Names | |
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IUPAC name
Gallium(III) antimonide | |
Other names
Gallium antimonide | |
Identifiers | |
12064-03-8 | |
ChemSpider | 3436915 |
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Jmol-3D images | Image |
PubChem | 4227894 |
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Properties | |
GaSb | |
Molar mass | 191.483 g/mol |
Density | 5.614 g/cm3 |
Melting point | 712 °C (1,314 °F; 985 K) |
insoluble | |
Band gap | 0.726 eV (300 K) |
Electron mobility | 3000 cm2/(V*s) (300 K) |
Thermal conductivity | 0.32 W/(cm*K) (300 K) |
Refractive index (nD) |
3.8 |
Structure | |
Crystal structure | Sphalerite, cF8 |
Space group | F-43m, No. 216 |
Hazards | |
NFPA 704 | |
Flash point | Non-flammable |
Except where noted otherwise, data is given for materials in their standard state (at 25 °C (77 °F), 100 kPa) | |
verify (what is: / ?) | |
Infobox references | |
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm.
Applications
GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
See also
External links
- properties listed at NSM, Ioffe Institute.
- National Compound Semiconductor Roadmap at the Office of Naval Research
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