7 nanometer

Semiconductor manufacturing processes
10 µm – 1971 6 µm – 1974 3 µm – 1977 1.5 µm – 1982 1 µm – 1985 800 nm – 1989 600 nm – 1994 350 nm – 1995 250 nm – 1997 180 nm – 1999 130 nm – 2001 90 nm – 2004 65 nm – 2006 45 nm – 2008 32 nm – 2010 22 nm – 2012 14 nm – 2014 10 nm – 2016 7 nm – 2018 5 nm – 2020
Half-nodes

The 7 nanometer (7 nm) node is the technology node following the 10 nm node. Although Intel has not yet divulged any certain plans to manufacturers or retailers, it has already stated that it would no longer use silicon at this node. ^[1]

Technology demos

In 2002, IBM produced a 6 nm transistor.^[2]

In 2003, NEC produced a 5 nm transistor.^[3]

In 2012, IBM produced a sub-10 nm carbon nanotube transistor that outperformed silicon on speed and power.^[4] "The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies," according to the abstract of the paper in Nano Letters.^[5]

On April, 2015 TSMC announced that 10 nm production would begin in 2016, followed by 7 nm production in 2017.^[6]

References

↑ "ISSCC 2015: Intel 10 nm Last Silicon Node". Android Authority.
↑ IBM claims world's smallest silicon transistor
↑ NEC test-produces world's smallest transistor.
↑ "IBM: Tiny carbon nanotube transistor outshines silicon". Cnet.com. January 30, 2012.
↑ Franklin, Aaron D. et al. (2012). "Sub-10 nm Carbon Nanotube Transistor". Nano Letters 12 (2): 758–762. doi:10.1021/nl203701g.
↑ TSMC launching 10 nm FinFet Process in 2016, followed by 7 nm in 2017

Preceded by 10 nm	CMOS manufacturing processes	Succeeded by 5 nm