Krishna Saraswat

Krishna Saraswat is a professor of electrical engineering at Stanford University in the United States. He is an ISI Highly Cited Researcher in engineering,^[1] placing him in the top 250 worldwide in engineering research, and a recipient of IEEE's Andrew S. Grove Award for "seminal contributions to silicon process technology".^[2]

Education and Positions

Saraswat received his B.E. degree in Electronics in 1968 from BITS Pilani in India and his Ph.D. in electrical engineering in 1974 from Stanford University. Saraswat stayed at Stanford as a researcher and was appointed Professor of Electrical Engineering in 1983. He also has an honorary appointment of an Adjunct Professor at the Birla Institute of Technology and Science, Pilani, India since January 2004 and a Visiting Professor during the summer of 2007 at IIT Bombay, India.

Career

Saraswat has worked on modeling of CVD of silicon, conduction in polysilicon, diffusion in silicides, contact resistance, interconnect delay, and oxidation effects in silicon. He pioneered the technologies for aluminum/titanium layered interconnects, which became an industry standard,^[3] as well as CVD of MOS gates with alternative materials such as tungsten, WSi2, and SiGe. During the late 80's he focused on single wafer manufacturing and developed equipment and simulators for it. Jointly with Texas Instruments a microfactory for single wafer manufacturing was demonstrated in 1993.^[4] Since the mid 90's, Saraswat has worked on technology for scaling MOS technology to sub-10 nm regime and pioneered several new concepts of 3-D ICs with multiple layers of heterogeneous devices. His present research focuses on new materials, particularly SiGe, germanium, and III-V compounds, to replace silicon as nanoelectronics scales further.

External links

• Saraswat's page at Stanford University

References