Hydrogen silsesquioxane

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Hydrogen silsesquioxane (HSQ) is a negative tone electron-beam resist. The Hydrogen silsesquioxane monomer is a cubical-shaped molecule having one Si atom at each corner, with corners being linked via oxygen atoms. Additionally, a hydrogen group is attached to each Si. The formula of the HSQ monomer is H8Si8O12. Thin HSQ layers have been used to show very high resolution (~10 nm) feature sizes.[1] Thickness of the coated resist has been reported to play a major role in the achievable resolution.[2]

It can be cross-linked by exposure to e-beam or EUV radiation with wavelengths shorter than 157 nm.

References

  1. ↑ Grigorescu, A. E.; van der Krogt, M. C.; Hagen, C. W.; Kruit, P. (2007). "10 nm lines and spaces written in HSQ, using electron beam lithography". Microelectronic Engineering 84 (5–8): 822–824. doi:10.1016/j.mee.2007.01.022. 
  2. ↑ Tavakkoli, A.; Piramanayagam, S. N.; Ranjbar, M.; Sbiaa, R.; Chong, T. C. (2011). "Path to achieve sub-10-nm half-pitch using electron beam lithography". Journal of Vacuum Science and Technology B 29 (1): 011035. doi:10.1116/1.3532938. 


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