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The micro-pulling-down (µ-PD) method is a crystal growth technique based on continuous transport of the melted substance through micro-channel(s) made in a crucible bottom. Continuous solidification of the melt is progressed on a liquid/solid interface positioned under the crucible. In a steady state, both the melt and the crystal are pulled-down with a constant (but generally different) velocity.
Many different types of crystal are grown by this technique, including Y3Al5O12, Si, Si-Ge, LiNbO3, α-Al2O3, Y2O3, Sc2O3, LiF, CaF2, BaF2, etc. [1][2]
Standard routine procedure used in the growth of most of µ-PD crystals is well developed. The general stages of the growths include:
- charging of the crucible with starting materials (mixture of powders),
- heating of the crucible until starting materials in the crucible are completely melted,
- upward displacement of the seed until its contact with the meniscus or crucible,
- formation of the meniscus and partial melting of the seed top,
- correction of the shape of the meniscus through appropriate adjustment of crucible temperature and position of the seed crystal,
- crystal growth through puling of the seed in downward direction,
- separation of the as grown crystal from the meniscus,
- and cooling of the system (including the crystal and the crucible) to room temperature