Indium phosphide | |
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Other names
Indium(III) phosphide |
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Identifiers | |
CAS number | 22398-80-7 |
ChemSpider | 28914 |
Jmol-3D images | Image 1 |
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Properties | |
Molecular formula | InP |
Molar mass | 145.792 g/mol |
Appearance | black cubic crystals |
Density | 4.81 g/cm3, solid |
Melting point |
1062 °C (1335 K) |
Solubility in water | slightly soluble in acids[1] |
Band gap | 1.344 eV (300 K; direct) |
Electron mobility | 5400 cm2/(V·s) (300 K) |
Thermal conductivity | 0.68 W/(cm·K) (300 K) |
Refractive index (nD) | 3.1 (infrared); 3.55 (632.8 nm)[2] |
Structure | |
Crystal structure | Zinc blende |
Coordination geometry |
Tetrahedral |
Thermochemistry | |
Std enthalpy of formation ΔfH |
-88.7 kJ/mol |
Standard molar entropy S |
59.8 J/(mol·K) |
Specific heat capacity, C | 45.4 J/(mol·K)[3] |
Hazards | |
MSDS | External MSDS |
EU Index | Not listed |
Main hazards | Toxic, hydrolysis to phosphine |
Related compounds | |
Other anions | Indium nitride Indium arsenide Indium antimonide |
Other cations | Aluminium phosphide Gallium phosphide |
Related compounds | Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide |
(verify) (what is: / ?) Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) |
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Infobox references |
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
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