A-RAM

Computer memory types
Volatile
RAM DRAM (e.g., DDR SDRAM) SRAM In development T-RAM Z-RAM TTRAM Historical Delay line memory Selectron tube Williams tube
Non-volatile
ROM Mask ROM PROM EPROM EEPROM Flash memory Early stage FeRAM MRAM PRAM In development CBRAM SONOS RRAM Racetrack memory NRAM Millipede memory Historical Drum memory Magnetic-core memory Plated wire memory Bubble memory Twistor memory

A-RAM, Advanced-Random Access Memory is a new DRAM memory based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada, UGR (Spain) in collaboration with the Centre National de la Recherche Scientifique, CNRS (France). It was conceived by Dr. Noel Rodriguez (UGR), Prof. Francisco Gamiz (UGR) and Prof. Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate Silicon on insulator (SOI), double-gate, FinFETs and multiple-gate FETs (MuFETs).

The conventional 1-Transistor + 1-Capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. Beyond the 45 nm node, the DRAM industry will need new concepts avoiding the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, where the A-RAM is included, replaces the storage capacitor for the floating body of SOI transistors to store the charge.

References

Patent number: FR09/52453, "Point mémorie RAM à un transistor", Institut Nationalle de la Propiété Industrielle.

"A-RAM: Novel capacitor less DRAM memory". 2009 IEEE International SOI Conference. Foster City, CA.

External links

A-RAM website at the University of Granada

EETimes announces A-RAM