90 nanometer

Semiconductor manufacturing processes
10 µm — 1971 3 µm — 1975 1.5 µm — 1982 1 µm — 1985 800 nm (.80 µm) — 1989 600 nm (.60 µm) — 1994 350 nm (.35 µm) — 1995 250 nm (.25 µm) — 1998 180 nm (.18 µm) — 1999 130 nm (.13 µm) — 2000 90 nm — 2002 65 nm — 2006 45 nm — 2008 32 nm — 2010 22 nm — 2011 16 nm — approx. 2013 11 nm — approx. 2015
Half-nodes

The 90 nm process refers to the level of CMOS process technology that was reached in the 2002–2003 timeframe, by most leading semiconductor companies, like Intel, AMD, Infineon, Texas Instruments, IBM, and TSMC.

The origin of the 90 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).

The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm node. Yield issues associated with this transition (due to the use of new photoresists) were reflected in the high costs associated with this transition.

Even more significantly, the 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter.

Contents 1 Example: Elpida 90 nm DDR2 SDRAM process[1] 2 Processors using 90 nm process technology 3 See also 4 References 5 External links

Example: Elpida 90 nm DDR2 SDRAM process^[1]

• Use of 300 mm wafer size
• Use of KrF (248 nm) lithography with optical proximity correction
• 512 Mbit
• 1.8 V operation
• Derivative of earlier 110 nm and 100 nm processes

Processors using 90 nm process technology

• IBM PowerPC G5 970FX - 2004
• IBM PowerPC G5 970MP - 2005
• IBM PowerPC G5 970GX - 2005
• IBM "Waternoose" Xbox 360 Processor - 2005
• IBM/Sony/ Toshiba Cell Processor - 2005
• Intel Pentium 4 Prescott - 2004-02
• Intel Celeron D Prescott-256 - 2004-05
• Intel Pentium M Dothan - 2004-05
• Intel Celeron M Dothan-1024 - 2004-08
• Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville - 2004-06
• Intel Pentium D Smithfield - 2005-05
• AMD Athlon 64 Winchester, Venice, San Diego, Orleans - 2004-10
• AMD Athlon 64 X2 Manchester, Toledo, Windsor - 2005-05
• AMD Sempron Palermo and Manila - 2004-08
• AMD Turion 64 Lancaster and Richmond - 2005-03
• AMD Turion 64 X2 Taylor and Trinidad - 2006-05
• AMD Opteron Venus, Troy, and Athens - 2005-08
• AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
• VIA C7 - 2005-05
• Loongson (Godson) 2Е STLS2E02 - 2007-04
• Loongson (Godson) 2F STLS2F02 - 2008-07
• MCST-4R - 2010-12

See also

• Photolithography

References

External links

• PC World Review
• Review ITworld
• AMD
• Fujitsu
• Intel
• August, 2002 release by Intel

Preceded by 130 nm

CMOS manufacturing processes

Succeeded by 65 nm