Image:TyNiemeyerDolanTechnique.png
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| Description |
English: Niemeyer-Dolan (angular evaporation) technique for the fabrication of single electron transistors. a: Side view, cut along the current path. b: Side view, cut perpendicular to the current path, and showing the resist mask and the layers deposited on it during the evaporations. Note how these depositions change the cross section of the openings in the mask. c: Top view, indicating the cut planes for views a and b. Drawings are approximately to scale in all dimensions.
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Created by Torsten Henning and published in Charging effects in niobium nanostructures, PhD thesis, Mikroelektronik och Nanovetenskap, Chalmers Tekniska Högskola AB och Göteborgs Universitet, Göteborg 1999. Full text available online [1] as www.arxiv.org e-print cond-mat/9901308. |
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Göteborg 1999 |
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| Permission (Reusing this image) |
see below |
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This file is licensed under Creative Commons Attribution 2.5 License In short: you are free to distribute and modify the file as long as you attribute its author(s) or licensor(s). |
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| Date/Time | Dimensions | User | Comment | |
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| current | 15:34, 12 October 2005 | 1,704×2,108 (103 KB) | DrTorstenHenning | ({{English}} Niemeyer-Dolan (angular evaporation) technique for the fabrication of single electron transistors. '''a''': Side view, cut along the current path. '''b''': Side view, cut perpendicular to the current path, and showing the resist mask and the l) |
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