Tantalum(III) nitride
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| Tantalum(III) nitride | |
|---|---|
| Other names | Tantalum mononitride |
| Identifiers | |
| CAS number | [12033-62-4] |
| Properties | |
| Molecular formula | TaN |
| Molar mass | 194.955 g/mol |
| Appearance | black crystals |
| Density | 13.7 g/cm3, solid |
| Melting point |
3090°C |
| Structure | |
| Crystal structure | hexagonal |
| Hazards | |
| EU classification | not listed |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
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Tantalum(III) nitride (TaN) is an inorganic chemical compound. It is used to create barrier layers between copper and silicon in the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1][2]
[edit] References
- ^ Ho, Johnny; Kim Meekyung (MK), Santala Melissa. Tantalum Nitride Barrier Layer in Copper-based ICs. Retrieved on 2006-09-02.
- ^ Akashi, Teruhisa (2005). Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance. Retrieved on 2006-09-02.
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