Image:Switches domain.svg

[edit] Summary

Cyril BUTTAY

This figure represents aproximately the domain covered by the main power electronics switches in the (U,I,f) space. Please note that the values are very inacurate, (improvement of technologies, specific requirements of applications...). The limits are not absolute, as it is for exemple possible to connect devices in parallel to increase their current ratings. Only Silicon devices have been considered.

Also please note that the domains are represented by rectangles, but it might not be possible to achieve the max U,I,f at the same time.

If you think I should change the data, please let me know: cyril DOT buttay AT free DOT fr

The figure has been generated using LaTeX (and the tex4ht driver) and the pgf package (version 1.01). The code is as follow (public domain):

% this document generates a graph that represents the 
% application domain of the main power electronics switches
% this file is intended to be compiled with latex/tex4ht

\documentclass[a4paper]{article}
\usepackage[english]{babel}
\usepackage[latin1]{inputenc}
\usepackage{tex4ht}
\def\pgfsysdriver{pgfsys-tex4ht.def}
\usepackage{tikz}

\begin{document}
\begin{tikzpicture}[scale=1]
  \begin{scope}[thick]
    % drawing of the axes
    \draw[->] (0,0) -- (12,0) node[anchor=south]{Current};
    \draw[->] (0,0) -- (0,8) node[anchor=west]{Voltage};
    \draw[->] (0,0) -- (-6,-6) node[anchor=north west]{Frequency};
    
    % the scales
    \foreach \x/\xtext in {-5/0 , -4/1~kV , -3/2~kV , -2/3~kV , -1/4~kV , 
      0/5~kV , 1/6~kV , 2/{7~kV~and~more}}{
      \draw (-5.2,\x) node[anchor=east]{\xtext};
      \draw(-5,\x) -- +(-0.2,0);
    }
    \foreach \x/\xtext in {-5/0 , -4/200~A , 0/1~kA , 5/2~kA , 6/{2.2~kA}}{
      \draw (\x,-5.2) node[anchor=north]{\xtext};
      \draw (\x,-5) -- +(0,-0.2);
    }
    
    \foreach \position/\xtext in {{(10,-1)}/{100~Hz},{(9,-2)}/{1~kHz},
      {(8,-3)}/{10~kHz},{(7,-4)}/{100~kHz},{(6,-5)}/{1~MHz and more}}{
      \draw\position -- ++(0.2,0) node[anchor=west]{\xtext};
    }
    \draw (6,-5.7) node[anchor=north]{and more};
  \end{scope}
  
  % now the grid
  \begin{scope}[thin]
    \foreach \x in {1,...,7}{
      \draw (0,\x) -- +(-5,-5);
      \draw (0,\x) -- +(11,0);
    }
    \foreach \x in {1,...,11}{
      \draw (\x,0) -- +(-5,-5);
      \draw (\x,0) -- +(0,7);
    }
    \foreach \x in {-5,-4.5,...,0}{
      \draw (\x,\x) -- +(0,7);
      \draw (\x,\x) -- +(11,0);
    }
  \end{scope}
  
  % and now add the data
  \begin{scope}[thick, draw=black]
    % first rectangle, the thyristor
    \filldraw [fill=red!40] (-1,-1)--++(0,7) node(THY1){}--++(11,0)--++(0,-7) node(THY2){}--cycle;
    \filldraw [fill=red!40] (THY2.base)--++(1,1)--++(0,7)--++(-1,-1)--cycle;
    \filldraw [fill=red!40] (THY1.base)--++(1,1)--++(11,0)--++(-1,-1)--cycle;
    \draw (4.5,5) node[anchor=south]{Thyristor};
    % second rectangle, the GTO
    \filldraw [fill=green!40] (-2,-2)--++(0,6) node(GTO1){} --++(10,0)--++(0,-6) node(GTO2){}--cycle;
    \filldraw [fill=green!40] (GTO2.base)--++(1,1)--++(0,6)--++(-1,-1)--cycle;
    \filldraw [fill=green!40] (GTO1.base)--++(1,1)--++(10,0)--++(-1,-1)--cycle;
    \draw (3,3) node[anchor=south]{GTO};
    % and now... the IGBT
    \filldraw [fill=blue!40] (-4,-4)--++(0,3) node(IGB1){} --++(5,0)--++(0,-3) node(IGB2){}--cycle;
    \filldraw [fill=blue!40] (IGB2.base)--++(2,2)--++(0,3)--++(-2,-2)--cycle;
    \filldraw [fill=blue!40] (IGB1.base)--++(2,2)--++(5,0)--++(-2,-2)--cycle;
    \draw (-1.5,-2) node[anchor=south]{IGBT};
    % the MOSFET
    \filldraw [fill=orange!40] (-5,-5)--++(0,1) node(MOS1){} --++(0.5,0)--++(0,-1) node(MOS2){}--cycle;
    \filldraw [fill=orange!40] (MOS2.base)--++(1,1)--++(0,1)--++(-1,-1)--cycle;
    \filldraw [fill=orange!40] (MOS1.base)--++(1,1)--++(0.5,0)--++(-1,-1)--cycle;
    \draw [->](-3,-4.2) node[anchor=west]{MOSFET} -- (-4,-4.2);
  \end{scope}
\end{tikzpicture}
\end{document}

[edit] Licensing

I, the copyright holder of this work, hereby publish it under the following licenses: Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation license, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled "GNU Free Documentation license". Aragonés | العربية | Asturianu | Български | বাংলা | ইমার ঠার/বিষ্ণুপ্রিয়া মণিপুরী | Brezhoneg | Bosanski | Català | Cebuano | Česky | Dansk | Deutsch | Ελληνικά | English | Esperanto | Español | Eesti | Euskara | فارسی | Suomi | Français | Gaeilge | Galego | עברית | Hrvatski | Magyar | Bahasa Indonesia | Ido | Íslenska | Italiano | 日本語 | ქართული | ភាសាខ្មែរ | 한국어 | Kurdî / كوردی | Latina | Lëtzebuergesch | Lietuvių | Bahasa Melayu | Nnapulitano | Nederlands | ‪Norsk (nynorsk)‬ | ‪Norsk (bokmål)‬ | Occitan | Polski | Português | Română | Русский | Slovenčina | Slovenščina | Shqip | Српски / Srpski | Svenska | తెలుగు | ไทย | Türkçe | Українська | اردو | Tiếng Việt | Volapük | Yorùbá | ‪中文(中国大陆)‬ | ‪中文(台灣)‬ | +/- This file is licensed under the Creative Commons Attribution ShareAlike license versions 2.5, 2.0, and 1.0 العربية | Български | Català | Česky | Dansk | Deutsch | English | Español | Euskara | فارسی | Français | עברית | Italiano | 日本語 | 한국어 | Lietuvių | Nederlands | Polski | Português | Русский | Svenska | தமிழ் | Türkçe | 中文 | 中文 | +/- You may select the license of your choice.

• Power semiconductor device