Spacistor
From Wikipedia, the free encyclopedia
The spacistor[1] was a type of transistor developed in the 1950s as an improvement over the point-contact transistor and the later alloy junction transistor. It offered much higher speed than earlier transistors.
It is composed of a P-N_junction with a wide depletion region, inside which two additional contacts are made: the injector and the modulator. The P material was called the base and the N material was called the collector. The injector acted like a standard bipolar junction transistor's emitter, the modulator like a standard bipolar junction transistor's base, and the collector acted like a standard bipolar junction transistor's collector. It achieved its high speed by reducing the charge carrier's transit time. It became obsolete in the early 1960s with the development of the diffusion transistor.
[edit] References
- ^ Wolf, Oswald; R. T. Kramer; J. Spiech; H. Shleuder (1966). Special Purpose Transistors: A Self-Instructional Programmed Manual. Prentice Hall, pp. 103-117.
