Simon Sze
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Dr. Simon Min Sze (Chinese: 施敏) is an electrical engineer. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of NCTU. He is well-known for his work in semiconductor physics and technology, including his discovery with Dawon Kahng of the floating-gate transistor[1], now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field. Sze received the J. J. Ebers Award in 1991 for his work in electron devices.[2]
[edit] Bibliography
- Physics of Semiconductor Devices, S. M. Sze. New York: Wiley, 1969, ISBN 0-471-84290-7; 2nd ed., 1981, ISBN 0-471-05661-8; 3rd ed., with Kwok K. Ng, 2006, ISBN 0-471-14323-5.
- Semiconductor Devices: Physics and Technology, S. M. Sze. New York: Wiley, 1985; 2nd ed., 2001, ISBN 0-471-33372-7.
- VLSI Technology, ed. S. M. Sze. New York: McGraw-Hill, 1983, ISBN 0-07-062686-3; 2nd ed., 1988, ISBN 0-07-062735-5.
[edit] References
- ^ D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, The Bell System Technical Journal, 46, #4 (1967), pp. 1288–1295.
- ^ Electron Devices Society J.J. Ebers Award, web page at the IEEE, accessed 11-I-2007.
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