Talk:Reverse Short Channel Effect
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The article seems incorrect to me. RSCE is increase of the threshold voltage at shorter gate length, unlike normal short channel effect where Vth is lower in shorter devices (often called threshold voltage roll-off). As the article points out correctly, shorter devices have higher average doping concentration in the channel as the source and drain halos overlap. In addition, transient diffusion of dopants due to injection of point defects are shown responsible for the pile up of the dopants near the oxide interface and increase of the threshold voltage.
