Talk:Power semiconductor device

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This article is in considerable need of expansion if it is to reflect the current state of the power semiconductor industry, the latest advances in technology and applications and its world-wide business market. DFH 15:33:19, 2005-09-10 (UTC)

[edit] Parameters of power semiconductor devices

The parameters named in this section are indeed power semicoductor's parameters, but the On-resistance is only accurately defined for MOSFET transistor. BJT as well as IGBT have a non-resistive behaviour, beacuse a voltage drop independent of the flowing current is always present. Thus i suggest to change the "on-resistance" parameter for a "voltage drop" kind parameter --Iruando (talk) 00:01, 21 February 2008 (UTC)