PLEDM
From Wikipedia, the free encyclopedia
PLEDM (Phase-state Low Electron (hole)-number Drive Memory) is a type of memory chip, developed in 1999 at Hitachi's laboratory at the University of Cambridge. PLEDM is based on PLEDTR technology.[1]
[edit] Features
- nonvolatile memory
- read/write time less than 10 nanoseconds
- one transistor for each memory cell
- reduced power consumption[2]
[edit] References
[edit] External Links
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