Talk:Ohmic contact
From Wikipedia, the free encyclopedia
 |
This article is within the scope of WikiProject Physics, which collaborates on articles related to physics. |
| ??? | This article has not yet received a rating on the assessment scale. [FAQ] |
| ??? | This article has not yet received an importance rating within physics. |
|
Help with this template Please rate this article, and then leave comments to explain the ratings and/or to identify its strengths and weaknesses. |
|
What this article still needs: some simple band diagrams illustrating the various energies; a table listing important metal-semiconductor contact combinations; a discussion of contact formation by implantation and annealing; a few words about barrier layers and electromigration. Alison Chaiken 00:57, 17 January 2006 (UTC)
Are the band diagrams for the ohmic contacts correct? I was under the impression that they should be reversed. In both cases, it appears that the majority carriers would have a difficult time moving from the semiconductor to the metal under zero (or negative) bias
Also, The Seebeck effect is not caused by ohmic or blocking contact. Rather, it is the flow of carriers due to a temperature gradient. This effect can happen in, say, a semiconductor by itself without any metal contact!
[edit] band-bending
"The built-in field is the cause of band-bending in the semiconductor near the junction. "
But what is the reason of this? LMB 15:50, 18 September 2007 (UTC)
[edit] semiconductor depletion region?
Umm... wouldn't a depletion region make it a Schottky barrier instead? Tunneling through a depletion region is called punch through, and it's a diode breakdown mechanism (see zener diode), but that contradicts the article's definition of an ohmic contact has having linear I-V.
Also Streetman says
Unlike the rectifying contacts discussed previously, no depletion region occurs in the semiconductor in these cases sinc ethe electrostatic potential difference required to align the Fermi levels at equilibrium calls for accumulation of the majority carriers in the semiconductor.
So I was just coming here to look for an equation to find the width of the accumulation region and there's this about depletion... this isn't my specialty but unless someone wants to defend this I think much of the main section will get ripped out.
I don't see how the penetration of the effects of the metal would depend on preexisting carrier density here. Potatoswatter 23:03, 7 November 2007 (UTC)
