Image:Ohmic3.png
From Wikipedia, the free encyclopedia
No higher resolution available.
Ohmic3.png (631 × 442 pixels, file size: 5 KB, MIME type: image/png)
| This is a file from the Wikimedia Commons. The description on its description page there is shown below.
|
[edit] Summary
An ohmic contact or Schottky barrier is formed when a metal and a p-type semiconductor are brought into contact. In the ideal case, the magnitude of the band bending Vbi and contact resistance depend on the doping of the semiconductor, its dielectric constant and the Schottky barrier φB = Eg − (φM − χS) where φM is the work function of the metal and Eg is the bandgap and χS the electron affinity of the p-type semiconductor.
[edit] Licensing
File history
Click on a date/time to view the file as it appeared at that time.
| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 08:54, 22 January 2006 | 631×442 (5 KB) | Chaiken | (An ohmic contact or Schottky barrier is formed when a metal and semiconductor are brought into contact. In the ideal case, the magnitude of the band bending <math>V_{bi}</math> and contact resistance depend on) |
File links
The following pages on the English Wikipedia link to this file (pages on other projects are not listed):
