Niemeyer-Dolan technique

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Niemeyer-Dolan technique for the fabrication of single electron transistors
Niemeyer-Dolan technique for the fabrication of single electron transistors

The Niemeyer-Dolan technique, also called Dolan technique or shadow evaporation technique (the term preferred by its inventor, J. Niemeyer), is a lithographic method to create nanometer-sized overlapping structures comprised of two or more materials.

A shadow mask for oblique angle evaporation is created on the substrate. Depending on the evaporation angle the shadow image of the mask is projected onto different positions on the substrate. By carefully choosing an individual angle for each material to be deposited, adjacent openings in the mask can be projected on the same spot, creating an overlay of different materials.