Image:Locos (microtechnology) process.svg
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Locos_(microtechnology)_process.svg (SVG file, nominally 625 × 1000 pixels, file size: 56 KB)
| This is a file from the Wikimedia Commons. The description on its description page there is shown below.
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[edit] Summary
| Description |
English: The image illustrates the LOCOS technology used in microfabrication mostly to create isolating structures.
I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, nitride mask IV. Etching of nitride layer and silicon oxide layer V. Thermal growth of silicon oxide VI. Furhter growth of thermal silicon oxide VII. Removal of nitride mask 1) Si, silicon substrate 2) SiO2, pad/buffer oxide, chemical vapor deposition silicon oxide 3) Si3N4, nitride mask 4) SiO2, isolation oxide, thermal oxide |
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| Source |
self-made |
| Date |
19.01.2008 |
| Author | |
| Permission (Reusing this image) |
see below |
[edit] Licensing
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I, the copyright holder of this work, hereby release it into the public domain. This applies worldwide. In case this is not legally possible: Afrikaans | Alemannisch | Aragonés | العربية | Asturianu | Български | Català | Česky | Cymraeg | Dansk | Deutsch | Eʋegbe | Ελληνικά | English | Español | Esperanto | Euskara | Estremeñu | فارسی | Français | Galego | 한국어 | हिन्दी | Hrvatski | Ido | Bahasa Indonesia | Íslenska | Italiano | עברית | Kurdî / كوردی | Latina | Lietuvių | Latviešu | Magyar | Македонски | Bahasa Melayu | Nederlands | Norsk (bokmål) | Norsk (nynorsk) | 日本語 | Polski | Português | Ripoarisch | Română | Русский | Shqip | Slovenčina | Slovenščina | Српски / Srpski | Svenska | ไทย | Tagalog | Türkçe | Українська | Tiếng Việt | Walon | 中文(简体) | 中文(繁體) | zh-yue-hant | +/- |
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| Date/Time | Dimensions | User | Comment | |
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| current | 16:53, 19 January 2008 | 625×1,000 (56 KB) | Twisp | ({{Information |Description= {{en|The image illustrates the LOCOS technology used in microfabrication mostly to create isolating structures. I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, ni) |
