Image:Line doubling.JPG

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[edit] Summary

The basic process for doubling unetched features:

Top: Photoresist is coated over the starting hardmask pattern.
Upper center: Second pattern is exposed in photoresist, forming features in between previous features.
Lower center: The underlying layer is etched using both the previous hardmask pattern and the new photoresist pattern as etch mask.
Bottom: Both the photoresist and hardmask pattern are removed, leaving the combination of the previous and newly defined features.

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File history

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	Date/Time	Dimensions	User	Comment
current	13:21, 8 March 2008	393×556 (14 KB)	Guiding light (Talk \| contribs)
	13:19, 8 March 2008	393×556 (14 KB)	Guiding light (Talk \| contribs)	(The basic process of doubling unetched features: Top: Photoresist coating over first hardmask pattern. Upper center: Forming photoresist features in between hardmask features. Lower center: Etching using both hardmask and photoresist features as etching )
	13:17, 8 March 2008	393×556 (14 KB)	Guiding light (Talk \| contribs)	(The basic process of doubling unetched features: Top: Photoresist coating over first hardmask pattern. Upper center: Forming photoresist features in between hardmask features. Lower center: Etching using both hardmask and photoresist features as etching )
	09:25, 8 March 2008	393×570 (14 KB)	Guiding light (Talk \| contribs)	(The basic process for doubling unetched features. Top: Photoresist is coated over the starting hardmask pattern. Upper center: Second pattern is exposed in photoresist, forming features in between previous features. Lower center: The underlying layer is )