Image:IvsV IGBT.png

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I, the copyright holder of this work, hereby publish it under the following licenses: Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation license, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled "GNU Free Documentation license". Aragonés | العربية | Asturianu | Български | বাংলা | ইমার ঠার/বিষ্ণুপ্রিয়া মণিপুরী | Brezhoneg | Bosanski | Català | Cebuano | Česky | Dansk | Deutsch | Ελληνικά | English | Esperanto | Español | Eesti | Euskara | فارسی | Suomi | Français | Gaeilge | Galego | עברית | Hrvatski | Magyar | Bahasa Indonesia | Ido | Íslenska | Italiano | 日本語 | ქართული | ភាសាខ្មែរ | 한국어 | Kurdî / كوردی | Latina | Lëtzebuergesch | Lietuvių | Bahasa Melayu | Nnapulitano | Nederlands | ‪Norsk (nynorsk)‬ | ‪Norsk (bokmål)‬ | Occitan | Polski | Português | Română | Русский | Slovenčina | Slovenščina | Shqip | Српски / Srpski | Svenska | తెలుగు | ไทย | Türkçe | Українська | اردو | Tiếng Việt | Volapük | Yorùbá | ‪中文(中国大陆)‬ | ‪中文(台灣)‬ | +/- This file is licensed under the Creative Commons Attribution ShareAlike license versions 2.5, 2.0, and 1.0 العربية | Български | Català | Česky | Dansk | Deutsch | English | Español | Euskara | فارسی | Français | עברית | Italiano | 日本語 | 한국어 | Lietuvių | Nederlands | Polski | Português | Русский | Svenska | தமிழ் | Türkçe | 中文 | 中文 | +/- You may select the license of your choice.

Made using gnuplot V4.0 and the following source:

# This file is used to plot the I(V) curve set of a MOSFET

# graph configuration
set terminal postscript eps enhanced "Times-Roman" 24 
set encoding iso_8859_15
unset title
set line style 1 lt 10 lw 3 pt 0 ps 0
set line style 2 lt 3 lw 3 pt 0 ps 0
set border 15 lt 10 lw 4
set mxtics 
set mytics 
set grid xtics ytics
set xlabel "Collector-Emitter voltage [V]"
set ylabel "Collector current [arbitrary unit]"
set format y '%0.0f'
set format x "%0.0f" 

# labels displayed on the graph
set label 3 'V{_{GE}}-V{_{th}}=7 V' at 9.8,47 right
set label 4 '6 V' at 9.8,37.5 right
set label 5 '5 V' at 9.8,26.5 right
set label 6 '4 V' at 9.8,17.4 right
set label 7 '3 V' at 9.8,10.5 right
set label 8 '2 V' at 9.8,5.5 right
set label 9 '1 V' at 9.8,2.5 right

# The model is basically that of a mosfet, with a diode in series
# Drain current in linear region
linear(vds,vgsvth)=2*vgsvth*vds-vds**2
# Drain current in saturation region
saturation(vds,vgsvth)=vgsvth**2
# Drain current 
draincurrent(vds,vgsvth)=(vds>vgsvth?saturation(vds,vgsvth):linear(vds,vgsvth))
# limit between saturation and linear regions
limit(vds)=vds**2
# diode forward voltage:
Vf(t,vgsvth)=2*0.026*log(draincurrent(t,vgsvth)/10e-8)

set output "IvsV_IGBT.eps"
set parametric
set sample 2000
# this is totally non physical: we calculate the current in the drain of the mosfet,
# then use this value to calculate the voltage drop in the diode, and then plot Vf+voltage
# on the x-axis, and the current on the y-axis. Then, I divide the voltage across the MOSFET
# by an arbitrary factor (4) to get a steeper curve.
plot [0:40 ][0:10][0:50] Vf(t,1)+t/4,draincurrent(t,1) ls 1 title '',\
        Vf(t,2)+t/4,draincurrent(t,2) ls 1 title '',\
        Vf(t,3)+t/4,draincurrent(t,3) ls 1 title '',\
        Vf(t,4)+t/4,draincurrent(t,4) ls 1 title '',\
        Vf(t,5)+t/4,draincurrent(t,5) ls 1 title '',\
        Vf(t,6)+t/4,draincurrent(t,6) ls 1 title '',\
        Vf(t,7)+t/4,draincurrent(t,7) ls 1 title ''

• Insulated-gate bipolar transistor