Indium(III) nitride

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Indium(III) nitride
Image:Indium(III) nitride.jpg
Identifiers
CAS number	[25617-98-5]
Properties
Molecular formula	InN
Hazards
MSDS	External MSDS
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references

Indium nitride (In N) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.

The bandgap of InN has now been established to be between 0.7 and 0.65 eV depending on temperature. The effective electron mass is between 0.04 and 0.07 m₀. Electron mobility as high as >2000 cm²·V^-1·s^-1 has been reported. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.7eV) to the ultraviolet (3.4 eV).

Currently there is research into developing solar cells using the nitride based semiconductors. Using the alloy indium gallium nitride (InGaN), an optical match to the solar spectrum is obtained. The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality. p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.

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