High Power Impulse Magnetron Sputtering

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High Power Impulse Magnetron Sputtering (HIPIMS, also known as High Impact Power Magnetron Sputtering and High Power Pulsed Magnetron Sputtering, HPPMS) is a method for physical vapor deposition of thin films which is based on magnetron sputter deposition. HIPIMS utilises extremely high power densities of the order of kWcm-2 in short pulses (impulses) of tens of microseconds at low duty cycle (on/off time ratio) of < 10%.

HIPIMS is used for:

  • adhesion enhancing pretreatment of the substrate prior to coating deposition (substrate etching)
  • thin film deposition

The first patent on HIPIMS was filed by Vladimir Kouznetsov (priority date 9 Dec 1997), Kouznetsov US 6296742 B1.

Contents

[edit] HIPIMS Plasma Discharge

HIPIMS plasma is generated by a glow discharge where the discharge current density can reach up to 6 Acm-2, whilst the discharge voltage is maintained at several hundred volts.[1] The discharge is homogeneously distributed across the surface of the cathode of the chamber. HIPIMS generates a high density plasma of the order of 1013 ions cm-3[1] containing high fractions of target metal ions.

[edit] Substrate pretreatement by HIPIMS

Substrate pretreatment in a plasma environment is required prior to deposition of thin films on mechanical components such as automotive parts, metal cutting tools and decorative fittings. The substrates are immersed in a plasma and biased to a high voltage of a few hundred volts. This causes high energy ion bombardment that sputters away any contamination. In cases when the plasma contains metal ions, they can be implanted into the substrate to a depth of a few nm. HIPIMS is used to generate a plasma with a high density and high proportion of metal ions. When looking at the film-substrate interface in cross-section, one can see a clean interface. Epitaxy or atomic registry is typical between the crystal of a nitride film and the crystal of a metal substrate when HIPIMS is used for pretreatment.[2] HIPIMS has been used for the pretreatment of steel substrates for the first time in February 2001 by A.P. Ehiasarian.[3]

[edit] Thin Film Deposition by HIPIMS

Thin films deposited by HIPIMS at discharge current density > 0.5 Acm-2 have a dense columnar structure with no voids. Copper films deposited by HIPIMS are able to fill high aspect ratio trenches[4]

HIPIMS has been used for the deposition of transition metal nitride (CrN) thin films for the first time in February 2001 by A.P. Ehiasarian. The films had a dense microstructure, were free of large scale defects and had low sliding wear coefficient.[3]

[edit] References

  1. ^ a b Ehiasarian, Arutiun P.; New, R.; Munz, W.-D.; Hultman, L.; Helmersson, U. & Kouznetsov, V. (2002), “Influence of High Power Densities on the Composition of Pulsed Magnetron Plasmas”, Vacuum 65: 147-154, DOI 10.1016/S0042-207X(01)00475-4 .
  2. ^ Ehiasarian, Arutiun P.; Wen, J.G. & Petrov, I. (2007), “Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion”, Journal of Applied Physics 101 (5): item 054301, 10 pp., DOI 10.1063/1.2697052 .
  3. ^ a b Ehiasarian, Arutiun P.; Munz, W.-D.; Hultman, L.; Helmersson, U. & Petrov, I. (2003), “High Power Pulsed Magnetron Sputtered CrNx Films”, Surface and Coatings Technology 163-164: 267-272, DOI 10.1016/S0257-8972(02)00479-6 .
  4. ^ Kouznetsov, V.; Macak, K.; Schneider, J.; Helmersson, U. & Petrov, I. (1999), “A novel pulsed magnetron sputter technique utilizing very high target power densities”, Surface and Coatings Technology 163-164 (2-3): 290-293, DOI 10.1016/S0257-8972(99)00292-3 

[edit] Further reading

[edit] External links