Talk:Heterojunction bipolar transistor

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[edit] epitaxy

In the Fabrication section it says:

"Due to the need to manufacture HBT devices with extremely thin base layers, molecular beam epitaxy is principally employed."

This is true up to a point. Other techniques are used depending on the material system. Notably IBM et al. use a proprietary UHV CVD system for SiGe. Other techniques used include MOVPE for quaternary systems.

I didn't want to change the entry for feat of treading on someone's toes.

Roy

Royzee (talk) 12:25, 23 January 2008 (UTC)