Gas immersion laser doping

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Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon.

[edit] How it works

Example: Doping Silicon with Boron

A thin Silicon wafer is immersed in Boron gas while a pulsed laser repeatedly melts and cools the wafer. The Boron atoms in the gas diffuse into the molten parts of the Silicon and stay there when the Silicon solidifies, thus producing a Silicon wafer with Boron impurities. The resultant material is a P-type semiconductor.

[edit] See also

• Doping
• Semiconductor Wafers
• Semiconductor
• P-type semiconductor
• N-type semiconductor

[edit] References

• http://physicsweb.org/articles/news/10/11/19/1