EKV MOSFET Model

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The EKV Mosfet Model is a mathematical model of Metal-Oxide Semiconductor Field-Effect Transistors which is intended for circuit simulation and analog circuit design.[1] It was developed by C. C. Enz, F. Krummenacher, and E. A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.

[edit] References

  1. ^ Enz, C. C.; Krummenacher, F. & Vittoz, E.A., “An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications”, Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design 8: 83-114, July 1995 
  2. ^ Enz, C. C.; Krummenacher, F. & Vittoz, E.A., “A CMOS Chopper Amplifier”, IEEE Journal of Solid-State Circuits 22 (3): 335-342, June 1987 

[edit] See also

[edit] External links

  • Web Page of Christian Enz [1]
  • Web Page of François Krummenacher [2]
  • About Eric Vittoz [3]
  • Main Web Page for the EKV Model [4]