Talk:Double patterning

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[edit] Double or multiple patterning?

Today an anon moved multiple patterning to double patterning by cut and paste. Apparently, the move a while ago of double patterning to multiple patterning was by cut and paste too. That loses the history of the page. I now merged the history of the two pages so one can track its creation back from the beginning.

The next question is which title is more appropriate? I tend to incline towards double patterning, as that's where the technology is as of now (well, it is even not there yet). Comments? Oleg Alexandrov (talk) 05:34, 9 March 2008 (UTC)

I agree, double patterning is the more appropriate title. Going to multiple patterning is like trying to run before walking. The one which is practiced most widely is the double exposure, which uses one photoresist layer with two different exposures. There are no special tricks, because currently the two exposures are somewhat independent, e.g., one trims the other. The spacer technique is most likely already practiced by Micron for the IM Flash NAND products. If gate contacts are located close to diffusion contacts in Intel's 45 nm process, then they must use pattern accumulation for the contact layer as well.Guiding light (talk) 14:39, 9 March 2008 (UTC)

Intel's double patterning is used in the gate layer to square off the ends.218.168.206.13 (talk) 12:30, 2 April 2008 (UTC)

[edit] Fujifilm double development patterning

Fujifilm's approach as described in the linked article is very interesting. The photoresist is developed twice, once to remove the most heavily exposed regions, and a second time to remove the least exposed or unexposed regions. The intermediate exposure regions are left. Since these constitute the two edges of a line, the effect of double patterning is apparent, but there is a catch. Since exposure is a continuous function of position, the intermediate exposure region must exist in loops. There cannot be a "jump" from "intermediate" to "heavy" or "light". 218.168.206.13 (talk) 12:30, 2 April 2008 (UTC)