Dmitri Z. Garbuzov
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| Dmitri Z. Garbuzov | |
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| Born | October 27, 1940 Sverdlovsk, Russia |
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| Died | August 20,2006 Princeton, New Jersey |
| Nationality | Russian |
| Institutions | Ioffe Physico-Technical Institute (St. Petersburg, Russia); in latter years Princeton University (Princeton, NJ), Sarnoff Corporation (Princeton, NJ), and Princeton Lightwave, Inc. (Cranbury, NJ) |
| Known for | Practical (Room temperature, high efficiency, and high power) diode lasers at a variety of wavelengths from visible to mid-infrared |
| Notable awards | Lenin Prize (1972) State Prize (1987) Elected to the Russian Academy of Sciences (1991) Humboldt Award (1992) |
Dmitri Z. Garbuzov (1940, Sverdlovsk, Russia - August 2006, Princeton, New Jersey) is one of the pioneers and inventors of room temperature continuous-wave-operating diode lasers and high-power diode lasers which were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics), and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey, USA. Both teams attained this signal and historical accomplishment in the year 1969. Garbuzov is further responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths. Garbuzov is described by colleagues as having an exceptional characteristic of examining problems ab initio. His clear thinking often led him to unconventional conclusions, which nonetheless emerged as valid and revolutionary.
Following perestroika Garbuzov, who had also served as an accomplished and respected manager within the Soviet scientific research system during his Ioffe years, re-established a research group in the West which employed multiple Russian emigre scientists and yet simultaneously was highly valued as a contributor to three American for-profit enterprises. This transition from Soviet Russia to corporate America hints at elements of commonality between the two systems, notwithstanding more notable differences.
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[edit] Career in Semiconductor Light Emitting Device Science and Technology
[edit] Room Temperature Laser Diode
Placed in historical context, the invention of the first room-temperature diode laser in the Soviet Union occurred during a climate of intense Cold War competition and secrecy, albeit with sporadic scientific contacts at international conferences and during specially arranged international visits, and the question of primacy of invention has been debated over many years. It is worthwhile to note that the year of the first room temperature diode laser (1969) also ushered in the first moon landing.
While the Nobel Prize committee has signaled its satisfaction that the Russian team reached the accomplishment prior to Hayashi and Panish working at Bell Labs, there continues to be significant discussion on this point among cognoscenti including primary sources within the scientific community and the matter cannot be considered resolved — and may never be. Nonetheless, it clear that the activities of both the Russian and the American groups were of the highest quality and each independently receives high regard within the scientific community for having reached the historical first room-temperature diode laser.
[edit] Major Prizes Awarded
The Nobel Prize Committee awarded the 2000 Nobel Prize for Physics explicitly acknowledging only one key individual Zhores Alferov among the inventors of the room temperature diode laser. Indeed Alferov was the leader of the Soviet team to discover and invent the room temperature diode laser.
In contrast, the Soviet Union has much earlier recognized this accomplishment by awarding the 1972 Lenin Prize[1] to a number of individuals led by Alferov including Garbuzov, V.M. Andre'ev, V.I. Korolkov and D.N. Tretykov. The Soviet award thus more faithfully recognizes the historic accomplishment of the entire team. See nobelprize.org for Alferov's account.
Garbuzov received, with his team, the 1987 State Prize, the second highest prize awarded within the Soviet Union (see below).
In 1991 Garbuzov was honored by becoming a member of the Russian Academy of Sciences (see below).
Garbuzov received the Humboldt Award (see below) in 1992.
[edit] Professional career
[edit] Russia
[edit] Early Years in Soviet Russia
It is the 1969 demonstration of the first room-temperature diode laser that crowned years of scientific and technological research developments involving optical semiconductors. These accomplishments parallel and lag the microelectronics revolution beginning with the demonstration of the first transistor in 1948. The laser itself had earlier been invented by Charles Hard Townes and Arthur Leonard Schawlow, Gordon Gould and by Aleksandr Prokhorov, but there was as yet no practical laser "chip" which would make the laser a mass-market item today available for 25¢ or less in quantity (referring to CD lasers manufactured in quantities of 100,000,000 per annum).
Shortly after Townes and Schawlow, the possibility of lasing in a semiconductor device was recognized. The first major accomplishment in this context was the observation of nearly 100% internal efficiency in conversion of electron-hole pairs to photons in GaAs semiconductor devices by MIT Lincoln Laboratory, RCA Laboratories, and Texas Instruments, Inc. in 1962, followed by the demonstration of the first diode laser by General Electric, MIT Lincoln Laboratories, and IBM within a year or so. However impressive these results may have been for that era, the new devices operated only at cryogenic temperatures (typically that of liquid nitrogen, i.e., 77°K equivalent to –196°C). For practical everyday use, it would be necessary to demonstrate diode laser action at room temperature.
Today, as a result of the accomplishments of Garbuzov and collaborators under the leadership of Zhores I. Alferov, as well as the aforementioned competing team at Bell Laboratories (see above), diode lasers have enabled fiber optic telecommunications world wide (indirectly engendering the world wide web and, for that matter, Wikipedia), optical disk recording (i.e., CDs, DVDs, HD-DVDs, etc.), spectroscopic sensing systems, laser printers, laser machining for automobile manufacture, and other applications. The list of applications continues to grow today as both higher power and integrated optoelectronic circuit capabilities become attainable through advances in fabrication and design led by Garbuzov, among others.
[edit] Later Years in Russia
In subsequent years, Garbuzov developed the highest power diode lasers at wavelengths from 0.8 to 2.7 µm, introducing a new and revolutionary laser design to accomplish this, and made many contributions to dramatic new laser devices and businesses built upon them.
[edit] Chronology - Former Soviet Union
In 1962 Dmitri graduated from the Department of Physics of Leningrad State University.
In 1964, Dmitri joined the group of Zhores Alferov at A.F. Ioffe Physico-Technical Institute of Leningrad and soon became one of the leading members of this group. At the time, Alferov’s team was among the very few research groups in the world that studied heterojunctions in semiconductors. Their discoveries transformed the semiconductor laser from a curious toy to a functioning device, paving the way to many applications that we take for granted today such as CDs, DVDs, and fiber communications. In 2000, Zhores Alferov and Herbert Kroemer were awarded the Nobel Prize for their pioneering work.
The achievement of the first 300ºK continuous wave diode laser was reported in Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature [2]
Dmitri Garbuzov received his Ph.D. in 1968, and Doctor-of-Science degree in 1979. (Contrasting with the West, in the Russian system, the Doctor of Science is a second doctoral degree which is awarded to suitable candidates who themselves can lead research)
In 1991 Garbuzov became a corresponding member of the Russian Academy of Sciences.
In 1972, Dr. Garbuzov, together with Dr. Alferov and other colleagues, were awarded the Lenin Prize, the highest civilian award in the Soviet Union of that era. The Lenin Prize's citation was “Fundamental Research of Heterojunctions in Semiconductors and Development of Novel Devices on their Bases.”
In 1979, Garbuzov became head of the Semiconductor Luminescence and Injection Emitters Laboratory at the A.F. Ioffe Physical Technical Institute. Heterojunctions of quaternary solid solutions of InGaAsP/InP were investigated under his leadership. Lasers based on such structures are the basis of today's optical communications.
He led research on re-radiation effects in double heterojunctions. His group at the Ioffe Institute established almost 100% external efficiency of luminescence in GaAlAs heterostructures. This gave birth to yet another practical application — a new class of semiconductor alphanumeric displays. In 1987, Garbuzov and colleagues were awarded the State Prize for this achievement, the second highest civilian award in the former Soviet Union.
Aluminum-free diode heterostructure lasers became the next step in his scientific life. He suggested and developed lasers with wavelengths of 0.75-1.0 µm, including those of visible (red) wavelengths.
[edit] Transitional Year: Berlin
After the collapse of the Iron Curtain, Garbuzov received the Humboldt Award coming along with it support for one-year’s work in Germany, a high distinction given to a foreign scholar, for his work on Al-free diode lasers. He used the Award for an extended visit in 1992 to conduct research on InAlGaAs/InGaAs distributed feedback lasers at Dieter Bimberg’s laboratory at the Technical University in Berlin.
[edit] Transplanted Career: United States
[edit] Princeton, NJ: Princeton University; Sarnoff Corporation
Garbuzov appreciated Russia and the natural beauty of its lakes and forests. Nonetheless in 1994, following a year's visit at the group of Manijeh Razeghi at Northwestern University in Evanston, IL, he decided to join both Princeton University and Sarnoff Corporation, in Princeton, NJ (N.B.: Sarnoff Corporation is the former RCA Laboratories). In 1997 he was joined at Princeton University and Sarnoff Corporation by long-time collaborator Viktor B. Khalfin, a semiconductor physics theorist.
Garbuzov continued to advance the performance of semiconductor devices at both institutions and later became a Senior Member of Technical Staff at Sarnoff Corporation where he remained until May, 2000. At Sarnoff, Garbuzov worked on antimonide-based lasers demonstrating record wavelengths of 2.7 µm. At the same time, he made a significant impact in high power diode lasers and their heterostructures by introducing the "broadened waveguide," a concept which now serves as a basis for the entire industry producing high power lasers for industrial applications (U.S. Patent 5,818,860).
For researchers in optoelectronics R&D at Sarnoff Corporation see Millstone River Photonickers.
[edit] Princeton Lightwave
In 2000, Garbuzov became one of the founders of Princeton Lightwave Inc. (PLI) where he was Vice President of Research. Garbuzov's work led in great measure to the acquisition of a portion of PLI by the TRUMPF Group, a manufacturer of industrial laser metal-forming and manufacturing equipment. Garbuzov's work on high-power stripe lasers was the core of the research that laid the foundation of PLI, and at PLI, he kept pushing the envelope of production-worthy high power lasers.====
[edit] Biographical Notes
Dmitri Zalmanovitch Garbuzov was born in Sverdlovsk, Russia 1940 into a world in chaos at the outbreak of World War II. His father, Zalman Garbuzov whose name he too carried as a patronymic middle name according to tradition, was a prominent engineer. His mother was Natalia Polivoda. Dmitri Garbuzov's life can be viewed as a testament to one of the noblest of human motivations, that of creating order and human benefit out of chaos. Garbuzov's dedication to science was, in fact, a dedication to making a world that for future generations would afford superior opportunities than did the world into which he — and millions others — had been born.
Garbuzov took a special and personal interest in promoting the careers of others with whom he worked or talents he knew. He is widely admired for having facilitated important opportunities launching the careers of many younger scientists and engineers. He was a real friend to those who knew him best.
Dmitri was a family man. He was devoted to his wife, son, and daughter (names omitted out of privacy considerations). Whereas Dmitri was exceptionally modest, only those with whom he worked closely had the opportunity to observe a deep sense of dedication and the great pride he reserved in his heart for his family.
Garbuzov untimely succumbed to cancer, tragically diagnosed at an advanced stage, in August 2006 at the age of 65 at his home in Princeton, New Jersey.
[edit] Citations
[edit] Highly-cited English-language Publications
- H. Lee, P.K. York, R.J. Menna, R.U. Martinelli, D.Z. Garbuzov, S.Y. Narayan, and J.C. Connolly, Room-temperature 2.78 µm AlGaAsSb/InGaAsSb quantum-well lasers, Applied Physics Letters volume 66, issue 15, page 1942,(1995)
- D.Z. Garbuzov et al."2.3-2.7 room temperature CW operation of InGaAsSb/AlGaAsSb broad waveguide SCH-QW diode lasers". IEEE Photon. Technology Letters v. 11 pp. 794-796, (1999).
- G. Gu, D.Z. Garbuzov, P.E. Burrows, S. Venkatesh, S.R. Forrest, and M.E. Thompson, High-external-quantum-efficiency organic light-emitting devices, Optics Letters volume 22, page 396.
- V. Bulović, V.B. Khalfin, G. Gu, P.E. Burrows, D.Z. Garbuzov, S.R. Forrest Weak microcavity effects in organic light-emitting devices, Physical Review B volume 58, page 3730.
- L.J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DiMarco, J. C. Connolly, M. Jansen, F. Fang, and R.F. Nabiev,.8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers, Applied Physics Letters volume 69, page 1532.
[edit] U.S. Patents
| Patent Number | Title |
|---|---|
| 7,084,444 | Method and apparatus for improving efficiency in opto-electronic radiation source devices |
| 6,650,671 | Semiconductor diode lasers with improved beam divergence |
| 6,650,045 | Displays having mesa pixel configuration |
| 6,600,764 | High power single mode semiconductor laser |
| 6,556,611 | Wide stripe distributed Bragg reflector lasers with improved angular and spectral characteristics |
| 6,459,715 | Master-oscillator grating coupled power amplifier with angled amplifier section |
| 6,404,125 | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 6,366,018 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 6,330,263 | Laser diode having separated, highly-strained quantum wells |
| 6,301,279 | Semiconductor diode lasers with thermal sensor control of the active region temperature |
| 6,133,520 | Heterojunction thermophotovoltaic cell |
| 6,125,226 | Light emitting devices having high brightness |
| 6,091,195 | Displays having mesa pixel configuration |
| 6,046,543 | High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
| 6,005,252 | Method and apparatus for measuring film spectral properties |
| 5,986,268 | Organic luminescent coating for light detectors |
| 5,874,803 | Light emitting device with stack of OLEDS and phosphor downconverter |
| 5,834,893 | High efficiency organic light emitting devices with light directing structures |
| 5,818,860 | High power semiconductor laser diode |
[edit] Notes and references
- ^ 'Owing to the strict cultural separation prevailing during the Cold War era, documentation of the Lenin Prize is still not readily available in the West today but is documented and can be ascertained in Russian newspaper articles of the day as well as through primary sources.
- ^ Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature, Zh. I. Alferov, V.M. Andreev, D.Z. Garbuzov, Yu. V. Zhilyaev, E.P. Morozov, E.L. Portnoi, and V.G. Trofim, Sov. Phys. Semiconductors 4,) [Translated from Fiz. Tekh. Poluprovodn. 4,)].
