Talk:Charge trap flash

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Contents 1 Overall, needs a lot of work 2 Text removed 3 Article is incorrect. 4 Is this just SONOS

[edit] Overall, needs a lot of work

1. This article needs to be copyedited. 2. After reading the introduction, I still dont know what it is your talking about. Give the reader a good understanding of this in the first paragraph. 3. Can the information at the end be formatted into some kind of table. —The preceding unsigned comment was added by teglin (talk • contribs) .

4. I think we should consider linking the current events section to this page. 5. We need some better visuals to describe the product.

[edit] Text removed

I have removed a large amount of text from the page, which, per my suspicion on IRC, was infact copyvio from this site. I have listed it as a reference, and it is hopefully possible to write the article using only GFDL text Michael Billington (talk • contribs) 08:52, 15 September 2006 (UTC)

[edit] Article is incorrect.

Charge trap flash was not invented in 2006 by Samsung.

A company called Saifun patented numerous elements of charge trap flash before 2006. This technology is best commercialized by a company called Spansion, which was spun out of AMD. Spansion makes NOR flash memory but it's flavor of NOR uses MirrorBit technology (which uses charge trapping licensed from Saifun) instead of floating gate. (It does also make some floating gate, which was how it started off initially).

Spansion announced that it will buy Saifun in Oct. 2007 —Preceding unsigned comment added by 131.239.52.20 (talk) 19:34, 25 October 2007 (UTC)

[edit] Is this just SONOS

Is there any reason this can't be folded into the SONOS article? IE, is this not simply a trade name for Samsung's particular implementation of SONOS? Maury 15:49, 30 October 2007 (UTC)