Charge trap flash
From Wikipedia, the free encyclopedia
Charge Trap Flash (Often abbreviated to CTF) is a new technology to fabricate a NAND flash device invented by Samsung Electronics in 2006. The technology depends on a SONOS (semiconductor-oxide-nitride-oxide-semiconductor) or MONOS (metal-ONOS) capacitor structure, storing the information in charge traps in the nitride layer.
[edit] Further Reading
[1] Kinam Kim, "Technology for sub-50nm DRAM and NAND flash manufacturing," Electron Devices Meeting, 2005. IEDM Technical Digest, pp.323- 326.
[2] Sanghun Jeon, et al. "High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications," IEEE Trans. Elect. Dev., vol. 52 no. 12, pp. 2654-2659, Dec. 2005.
