BSIM
From Wikipedia, the free encyclopedia
BSIM (Berkeley Short-channel IGFET Model) refers to a family of MOSFET transistor models for integrated circuit design. Accurate transistor models are needed for electronic circuit simulation, which in turn is needed for integrated circuit design. As the devices become smaller each process generation (see Moore's law), new models are needed to accurately reflect the transistor's behavior.
Commercial and industrial analog simulators (such as SPICE) have added many other device models as technology advanced and earlier models became inaccurate. To attempt standardization of these models so that a set of model parameters may be used in different simulators, an industry working group was formed, the Compact Model Council[1], to choose, maintain and promote the use of standard models[2]. BSIM models, developed at UC Berkeley are one of these standards. They include BSIM3[3], BSIM4[4], and BSIMSOI[5].
Other models supported by the council are PSP, HICUM, and MEXTRAM.
[edit] References
- ^ CMC - Compact Model Council. Government Electronics & Information Technology Association (GEIA).
- ^ Standard Models and Downloads. Government Electronics & Information Technology Association (GEIA).
- ^ BSIM3 Latest News. UC Berkeley.
- ^ BSIM4 Latest News. UC Berkeley.
- ^ Introduction to BSIMSOI. UC Berkeley.
