Image:Bjt forward active bands.svg
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Bjt_forward_active_bands.svg (SVG file, nominally 740 × 400 pixels, file size: 87 KB)
[edit] Summary
Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. Ec is the conduction band, Ef indicates the quasi-fermi energy levels, Ei is the intrinsic Fermi level of the undoped semiconductor, and Ev is the valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.
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| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 01:52, 23 August 2006 | 740×400 (87 KB) | Matt Britt (Talk | contribs) | (== Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is ) |
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