Image talk:80 nm pitch contact.jpg

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[edit] Summary

Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed with optimized polarized cross-pole illumination on a 193 nm immersion tool (1.3 NA). An interesting aspect of this pattern is that it has reduced sensitivity to small variations of the mask feature width. Guiding light 23:31, 6 November 2007 (UTC)Ĥ

[edit] Notes

White areas on the mask indicate fully transmitting regions, while the colored area is the background attentuating phase shifter. While the imaging process here benefits from reduced sensitivity to focus and mask CD error factors, the sensitivity to dose errors is very strong, due to the significant presence of unmodulated light in the background of the exposure. This prevents areas of destructive interference from being completely dark. The normalized image log-slope is equal to 1.0. Guiding light 11:32, 6 November 2007 (UTC)

[edit] Picture fix

I am planning to remove the axis labels in this picture. Guiding light (talk) 07:20, 29 May 2008 (UTC)

The upload utility seems to have failed temporarily. Guiding light (talk) 08:36, 29 May 2008 (UTC)

The first upload is correct when viewed after clicking directly, so I reverted to this one. Still, no changes are happening. Will wait and see.Guiding light (talk) 08:53, 29 May 2008 (UTC)

Turned out ok...Guiding light (talk) 13:11, 29 May 2008 (UTC)