Image:80 nm pitch contact.jpg

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[edit] Summary

Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed with optimized polarized cross-pole illumination on a 193 nm immersion tool (1.3 NA). An interesting aspect of this pattern is that it has reduced sensitivity to small variations of the mask feature width. While the imaging process here benefits from reduced sensitivity to focus and mask CD error factors, the sensitivity to dose errors is very strong, due to the significant presence of unmodulated light in the background of the exposure. This prevents areas of destructive interference from being completely dark. The normalized image log-slope is equal to 1.0.

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File history

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	Date/Time	Dimensions	User	Comment
current	10:27, 29 May 2008	250×453 (22 KB)	Guiding light (Talk \| contribs)
	08:51, 29 May 2008	640×512 (27 KB)	Guiding light (Talk \| contribs)	(Reverted to version as of 08:21, 29 May 2008)
	08:31, 29 May 2008	640×512 (27 KB)	Guiding light (Talk \| contribs)	(Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed wi)
	08:21, 29 May 2008	640×512 (27 KB)	Guiding light (Talk \| contribs)	(Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed wi)
	04:55, 6 November 2007	232×448 (29 KB)	Oleg Alexandrov (Talk \| contribs)	(Crop and put images one under another to look better. Same license.)
	02:25, 6 November 2007	640×512 (28 KB)	Guiding light (Talk \| contribs)	(Left: Mask layout for 6% transmission attenuated phase-shift mask. Right: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed wi)