Tantalum(III) nitride
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| Tantalum(III) nitride | |
|---|---|
| Image:Tantalum(III) nitride.jpg | |
| General | |
| Other names | Tantalum mononitride |
| Molecular formula | TaN |
| Molar mass | 194.955 g/mol |
| Appearance | black crystals |
| Crystal structure | hexagonal |
| CAS number | [12033-62-4] |
| Properties | |
| Density and phase | 13.7 g/cm3, solid |
| Solubility | ? |
| Melting point | 3090°C |
| Boiling point | ? |
| Hazards | |
| EU classification | not listed |
| NFPA 704 | |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
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Tantalum(III) nitride (TaN) is an inorganic chemical compound. It is used to create barrier layers between copper and silicon in the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1] [2]
[edit] References
- ^ Ho, Johnny; Kim Meekyung (MK), Santala Melissa. Tantalum Nitride Barrier Layer in Copper-based ICs. Retrieved on September 2, 2006.
- ^ Akashi, Teruhisa (2005). Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance. Retrieved on September 2, 2006.
[edit] External links
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