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[edit] Summary

An ohmic contact or Schottky barrier is formed when a metal and a p-type semiconductor are brought into contact. In the ideal case, the magnitude of the band bending $V b i$ and contact resistance depend on the doping of the semiconductor, its dielectric constant and the Schottky barrier $φ B = E g - (φ M - χ S)$ where $φ M$ is the work function of the metal and $E g$ is the bandgap and $χ S$ the electron affinity of the p-type semiconductor.

Created by Alison Chaiken using xmgrace.

[edit] Licensing

I, the author of this work, hereby publish it under the following licenses:

Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled "GNU Free Documentation License".