Gallium(III) arsenide

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Gallium arsenide
Gallium arsenide
General
Systematic name Gallium arsenide
Molecular formula GaAs
Molar mass 144.645 g/mol
Appearance Gray cubic crystals.
CAS number [1303-00-0]
SMILES Ga#As
Properties
Density and phase 5.3176 g/cm³, solid.
Solubility in water < 0.1 g/100 ml (20°C)
Melting point 1238°C (1511 K)
Boiling point  ?°C (? K)
Electronic Properties
Band gap at 300 K 1.424 eV
Electron effective mass 0.067 me
Light hole effective mass 0.082 me
Heavy hole effective mass 0.45 me
Electron mobility at 300 K 9200 cm²/(V·s)
Hole mobility at 300 K 400 cm²/(V·s)
Structure
Molecular shape Linear
Crystal structure Zinc Blende
Dipole moment  ? D
Hazards
MSDS External MSDS
Main hazards Carcinogenic
NFPA 704

1
3
2
 
Flash point Non-flammable
R/S statement R: R23 R25
S: S1 S2 S20 S21 S22
S28 S41 S45
RTECS number  ?
Supplementary data page
Structure and
properties		 n, εr, etc.
Thermodynamic
data		 Phase behaviour
Solid, liquid, gas
Spectral data UV, IR, NMR, MS
Related compounds
Other anions  ?
Other cations  ?
Related compounds  ?
Except where noted otherwise, data are given for
materials in their standard state (at 25°C, 100 kPa)
Infobox disclaimer and references
This article is about the chemical compound. For the record label, see Gallium Arsenide.

Gallium arsenide (GaAs) is a compound of two elements, Gallium and Arsenic. It is an important semiconductor and is used to make devices such as microwave frequency integrated circuits (ie, MMICs), infrared light-emitting diodes, laser diodes and solar cells.

Contents

[edit] Applications

[edit] GaAs advantages

GaAs has some electronic properties which are superior to silicon's. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at frequencies in excess of 250 GHz. Also, GaAs devices generate less noise than silicon devices when operated at high frequencies. They can also be operated at higher power levels than the equivalent silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links, and some radar systems. It is used in the manufacture of Gunn diodes for generation of microwaves.

Another advantage of GaAs is that it has a direct band gap, which means that it can be used to emit light. Silicon has an indirect bandgap and so is very poor at emitting light. (Nonetheless, recent advances may make silicon LEDs and lasers possible).

Because of its high switching speed, GaAs would seem to be ideal for computer applications, and for some time in the 1980s many thought that microelectronics market would switch from silicon to GaAs. The first attempted changes were implemented by the supercomputer vendors Cray Computer Corporation, Convex, and Alliant in an attempt to stay ahead of the ever-improving CMOS microprocessor. Cray eventually built one GaAs-based machine in the early 1990s, the Cray-3, but the effort was not adequately capitalized, and the company filed for bankruptcy in 1995.

[edit] Silicon's advantages

Silicon has three major advantages over GaAs. First, silicon is abundant and cheap to process. Silicon's greater physical strength enables larger wafers (maximum of ~300 mm compared to ~150 mm diameter for GaAs). Si is highly abundant in the Earth's crust, in the form of silicate minerals. The economy of scale available to the silicon industry has also reduced the adoption of GaAs.

The second major advantage of Si is the existence of silicon dioxide—one of the best insulators. Silicon dioxide can easily be incorporated onto silicon circuits, and such layers are adherent to the underlying Si. GaAs does not form a stable adherent insulating layer.

The third, and perhaps most important, advantage of silicon is that it possesses a much higher hole mobility. This high mobility allows the fabrication of higher-speed P-channel field effect transistors, which are required for CMOS logic. Because they lack a fast CMOS structure, GaAs logic circuits have much higher power consumption, which has made them unable to compete with silicon logic circuits.

[edit] GaAs heterostructures

Complex layered structures of gallium arsenide in combination with aluminium arsenide (AlAs) or the alloy AlxGa1-xAs can be grown using molecular beam epitaxy (MBE) or using metalorganic vapour phase epitaxy (MOVPE). Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick.

Another important application of GaAs is for high efficiency solar cells. The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powers the robots Spirit and Opportunity, which are exploring Mars' surface. Also many solar cars utilize GaAs in solar arrays.

Single crystals of gallium arsenide can be manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material due to its mechanical properties. However, an encapsulated Czochralski method is used to produce ultra-high purity GaAs for semi-insulators.

[edit] Safety

The toxicological properties of gallium arsenide have not been thoroughly investigated. On one hand, due to its arsenic content, it is considered highly toxic and carcinogenic. On the other hand, the crystal is stable enough that ingested pieces may be passed with negligible absorption by the body. When ground into very fine particles, such as in wafer-polishing processes, the high surface area enables more reaction with water, releasing some arsine and/or dissolved arsenic. The environment, health and safety aspects of gallium arsenide sources (such as trimethylgallium and arsine) and industrial hygiene monitoring studies of metalorganic precursors have been reported recently in a review.[1]

[edit] See also

[edit] Related materials

[edit] References

  1. ^ Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); DOI:doi:10.1016/j.jcrysgro.2004.09.007

[edit] External links

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