Talk:Epitaxy
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This article was externally reviewed on December 14, 2005 by Nature. It was found to have 2 errors. |
what roles of lattice structure for the epitaxy growth?
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[edit] Combine
Suggest combining this article with the distinct articles on homoepitaxy and heteroepitaxy, neither of which have more than a sentence to add to the topic, and all of which contain substantially the same information. 144.213.253.14 04:36, 5 October 2005 (UTC)
Yes, agree. I've worked in epitaxy for some years and the terms home and hetero seem rarely used in this context. Its just "epitaxy"
[edit] Errors ID'd by Nature, to correct
The results of what exactly Nature suggested should be corrected is out... italicize each bullet point once you make the correction. -- user:zanimum
Reviewer: Max G. Lagally, Erwin W. Mueller Professor and Bascom Professor of Surface Science, University of Wisconsin, Madison, USA.
Third paragraph: I’m not sure that “outgassing” is the proper word. I think “diffusion” is meant. 2. The big problem with this one is that it really hardly says anything about epitaxy, but more about manufacturing the starting point for Si device manufacture. It fails to mention epitaxy in GaAs and other III-V compounds, where it is much more important, and it fails to mention why epitaxy occurs at all and in what systems it is possible.
[edit] First stab at the problem
I moved most of the silicon stuff to the CVD page and added a ton of "See also" links. My background is chemical engineering, so I have a skew. Does anyone else want to try to help? -- Pinktulip 09:18, 2 January 2006 (UTC)
[edit] epi
greek; "epi" "equal"
epi doesn't mean equal but above. There is a confusion with equi which does mean equal.
Yes, or 'upon'
