Double-gate transistor
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In a field effect transistor, the "gate" controls flow of electricity through the "channel" portion of the transistor. In conventional MOSFETs a single gate placed on top of the channel controls the conductivity. As the device dimensions are scaled down (below 45 nm technology nodes), it is difficult to control the short channel effects with a conventional transistor structure. The double-gate configuration faricated on a SOI wafer and with gates placed on two sides of the transistor, allows smaller device dimensions and higher electrical current. Double gate transistors can be made with a planar structure or more easily with a 3D structure, called FinFET. Variations of the 3D structure has been proposed, such as Tri-gate, gate-all-around, and Omega-FET.
