Chemical beam epitaxy
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Chemical beam epitaxy (CBE) is a hybrid form of molecular beam epitaxy where, instead of a solid source, a gas source is used. It is also called gas source molecular beam epitaxy. CBE uses room temperature gases for the source materials, thus avoiding significant contamination problems and the necessary higher substrate temperatures that can cause segregation of dopant atoms. The material is carried into a high vacuum reaction chamber as a gaseous compound, typically as the hydride or a metalorganic.
