Image:Bjt forward active bands.svg
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Bjt_forward_active_bands.svg (740 × 400 pixel, file size: 87 KB, MIME type: image/svg+xml)
[edit] Summary
Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. Ec is the conduction band, Ef indicates the quasi-fermi energy levels, Ei is the intrinsic Fermi level of the undoped semiconductor, and Ev is the valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.
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This image is licensed under the Creative Commons Attribution ShareAlike License v. 2.5: http://creativecommons.org/licenses/by-sa/2.5/ |
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- (del) (cur) 01:52, 23 August 2006 . . Matt Britt (Talk | contribs) . . 740×400 (88,583 bytes) (== Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is )
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